生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.65 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGP4N100 | IXYS |
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ADVANCED TECHNICAL INFORMATION | |
IXGP50N33TBM-A | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, PLASTIC, | |
IXGP50N60B4 | IXYS |
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High-Gain IGBTs | |
IXGP50N60C4 | IXYS |
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High-Gain IGBTs | |
IXGP7N60B | IXYS |
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HiPerFAST IGBT | |
IXGP7N60BD1 | IXYS |
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HiPerFAST IGBT with Diode | |
IXGP7N60C | IXYS |
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HiPerFAST IGBT Lightspeed Series | |
IXGP7N60CD1 | IXYS |
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HiPerFAST IGBT with Diode Lightspeed Series | |
IXGP8N100 | IXYS |
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IXGA8N100 | |
IXGP8N100 | LITTELFUSE |
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IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对 |