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IXGP50N60B4 PDF预览

IXGP50N60B4

更新时间: 2024-11-05 11:14:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
6页 220K
描述
High-Gain IGBTs

IXGP50N60B4 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.84其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):100 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:6.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):500 ns
标称接通时间 (ton):76 nsBase Number Matches:1

IXGP50N60B4 数据手册

 浏览型号IXGP50N60B4的Datasheet PDF文件第2页浏览型号IXGP50N60B4的Datasheet PDF文件第3页浏览型号IXGP50N60B4的Datasheet PDF文件第4页浏览型号IXGP50N60B4的Datasheet PDF文件第5页浏览型号IXGP50N60B4的Datasheet PDF文件第6页 
Preliminary Technical Information  
VCES = 600V  
IC110 = 36A  
VCE(sat) 1.80V  
High-Gain IGBTs  
IXGA50N60B4  
IXGP50N60B4  
IXGH50N60B4  
TO-263 AA (IXGA)  
Low-Vsat PT Trench IGBT  
G
E
C (Tab)  
TO-220AB (IXGP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
C (Tab)  
E
IC25  
IC110  
TC = 25°C  
TC = 110°C  
100  
36  
A
A
TO-247 (IXGH)  
ICM  
TC = 25°C, 1ms  
230  
A
SSOA  
VGE = 15V, TVJ = 125°C, RG = 10Ω  
ICM = 72  
A
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
G
PC  
TC = 25°C  
290  
W
C
E
C (Tab)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Emitter  
D
= Collector  
Tab = Collector  
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Features  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-247)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb.  
Nm/lb.in.  
z
Optimized for Low Conduction and  
Switching Losses  
International Standard Packages  
Square RBSOA  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z
z
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z Easy to Mount  
z Space Savings  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
600  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.5  
Applications  
25 μA  
mA  
±100 nA  
z Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Lamp Ballasts  
TJ = 125°C  
TJ = 125°C  
1
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
1.43  
1.40  
1.80  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100319A(04/11)  

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