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IXGP8N100 PDF预览

IXGP8N100

更新时间: 2024-11-17 21:55:07
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页数 文件大小 规格书
2页 105K
描述
IXGA8N100

IXGP8N100 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.73其他特性:LOW SATURATION VOLTAGE
最大集电极电流 (IC):16 A集电极-发射极最大电压:1000 V
配置:SINGLE门极发射器阈值电压最大值:5.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):54 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):900 ns标称接通时间 (ton):15 ns
Base Number Matches:1

IXGP8N100 数据手册

 浏览型号IXGP8N100的Datasheet PDF文件第2页 
IXGA 8N100 VCES = 1000 V  
IGBT  
IXGP 8N100 IC25  
VCE(sat)  
=
=
16 A  
2.7 V  
Preliminary data sheet  
TO-220AB (IXGP)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1000  
1000  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
16  
8
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
32  
TO-263 (IXGA)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 120 W  
ICM = 16  
A
(RBSOA)  
Clampedinductiveload  
@ 0.8 VCES  
G
E
PC  
TC = 25°C  
54  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
• Internationalstandardpackages  
JEDEC TO-220AB and TO-263AA  
• Low VCE(sat)  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
- forminimumon-stateconduction  
losses  
• MOS Gate turn-on  
Weight  
TO-220  
TO-263  
4
2
g
g
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
1000  
2.5  
V
V
IC = 250 mA, VCE = VGE  
5.0  
• Capacitordischarge  
ICES  
VCE = 0.8 VCES  
VGE= 0 V  
TJ = 25°C  
TJ = 125°C  
25  
mA  
mA  
250  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
• Easy to mount with one screw  
• Reduces assembly time and cost  
• High power density  
VCE(sat)  
IC = ICE90, VGE = 15V  
2.2  
2.7  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98565B (7/00)  
1 - 2  

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