型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGQ200N60Y3 | ETC |
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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) | |
IXGQ20N120B | IXYS |
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High Voltage IGBT with Diode | |
IXGQ20N120B | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGQ20N120BD1 | IXYS |
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High Voltage IGBT with Diode | |
IXGQ240N30PB | IXYS |
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Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
IXGQ240N30PB | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
IXGQ25N100Y4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C) | |
IXGQ25N50Y4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 25A I(C) | |
IXGQ25N60Y4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 25A I(C) | |
IXGQ25N90Y4 | ETC |
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TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 900V V(BR)CES | 25A I(C) |