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IXGQ85N33PCD1 PDF预览

IXGQ85N33PCD1

更新时间: 2024-01-26 18:50:31
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
5页 150K
描述
Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode

IXGQ85N33PCD1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.72外壳连接:COLLECTOR
最大集电极电流 (IC):85 A集电极-发射极最大电压:330 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:GENERAL PURPOSE SWITCHING
晶体管元件材料:SILICON标称断开时间 (toff):218 ns
标称接通时间 (ton):115 nsBase Number Matches:1

IXGQ85N33PCD1 数据手册

 浏览型号IXGQ85N33PCD1的Datasheet PDF文件第2页浏览型号IXGQ85N33PCD1的Datasheet PDF文件第3页浏览型号IXGQ85N33PCD1的Datasheet PDF文件第4页浏览型号IXGQ85N33PCD1的Datasheet PDF文件第5页 
Advance Technical Information  
PolarTM High Speed  
VCES  
ICP  
= 330 V  
= 340 A  
IXGQ85N33PCD1  
IGBT  
VCE(sat) 2.1 V  
with Anti-Parallel Diode  
for PDP Sustain Circuit  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P  
VCES  
VGEM  
TJ = 25°C to 150°C  
330  
V
V
±30  
G
C
IC25  
ICP  
TC = 25°C, IGBT chip capability  
TJ 150°C, tp 1 μs, D 1%  
TJ 150°C, tp < 10 μs  
85  
A
A
A
A
E
(TAB)  
C = Collector  
TAb = Collector  
340  
40  
G = Gate  
E = Emitter  
IDP  
IC(RMS)  
Lead current limit  
75  
Features  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 20 Ω  
ICM = 96  
A
International standard package  
Fast tfi for minimum turn off  
switching losses  
(RBSOA) Clamped inductive load, VCE < 300 V  
PC  
TC = 25°C  
150  
W
MOS Gate turn-on  
- drive simplicity  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Positive dVsat/dt for  
paralleling  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body  
300  
260  
°C  
Md  
Mounting torque  
1.3/10 Nm/lb.in.  
5.5  
Weight  
g
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 1 mA, VCE = VGE  
3.0  
6.0  
V
VCE = 330 V  
VGE = 0 V  
1 μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
VGE = 15V,  
Note 1  
IC = 50 A  
1.43 2.1  
V
V
V
V
TJ = 125°C  
IC = 100 A  
TJ = 125°C  
1.47  
1.85 3.0  
2.0  
© 2006 IXYS CORPORATION, All rights reserved  
DS99610D(02/07)  

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