是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.72 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 85 A | 集电极-发射极最大电压: | 330 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | GENERAL PURPOSE SWITCHING |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 218 ns |
标称接通时间 (ton): | 115 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGQ90N27PB | IXYS |
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Preliminary Technical Information PolarTM IGBT for PDP Applications |
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IXGQ90N33TB | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN |
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IXGQ90N33TBD1 | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P |
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IXGQ90N33TBD1 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P |
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IXGQ90N33TC | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN |
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IXGQ90N33TCD1 | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN |
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IXGQ90N33TCD4 | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P |
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IXGR120N60B | IXYS |
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HiPerFASTTM IGBT ISOPLUS247TM |
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IXGR120N60B | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 |
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IXGR120N60C2 | IXYS |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC, |
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