Datasheet > IXGQ90N33TCD1

IXGQ90N33TCD1

更新时间： 2023-01-15 00:00:00

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
5页	144K
描述
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN

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IXGQ90N33TCD1 数据手册

Trench Gate,

High Speed,

IGBTs

IXGA90N33TC

IXGQ90N33TC

IXGQ90N33TCD1

V_CES

I_CP

= 330V

= 360A

V_CE(sat)≤ 1.80V

For PDP Applications

90N33TCD1

90N33TC

Symbol

Test Conditions

Maximum Ratings

V_CES

T_J= 25°C to 150°C

330

V_GES

V_GEM

Continuous

Transient

±20

±30

TO-263 AA (IXGA)

I_C25

T_C= 25°C (Chip Capability)

Lead Current Limit

T_C= 110°C

I_C(RMS)

I_C110

I_CP

C (Tab)

T_C< 150°C, tp < 10μs

I_CP

T_C< 150°C, tp < 10μs, Duty cycle < 1%

360

TO-3P (IXGQ)

P_C

T_C= 25°C

200

T_J

T_JM

T_stg

-55 ... +150

150

°C

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

C (Tab)

G = Gate

E = Emitter

= Collector

M_d

Mounting Torque (TO-3P)

1.13/10

Nm/lb.in.

Tab = Collector

Weight

TO-263

TO-3P

2.5

5.5

Features

Symbol

Test Conditions

Characteristic Values

• Low V_CE(sat)

- for minimum On-State Conduction

Losses

(T_J= 25°C, Unless Otherwise Specified

Min.

330

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

• Fast Switching

5.0

μA

Applications

T_J= 125°C

200 μA

• PDP Screen Drivers

I_GES

V_CE= 0V, V_GE= ±20V

±200 nA

V_CE(sat)

V_GE= 15V, I_C= 20A, Note 1

I_C= 45A

1.40

1.80

1.54

1.82

1.95

T_J= 125°C

I_C= 90A

DS99754B (07/11)

12 3 4 5

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