Datasheet > IXGQ20N120B

IXGQ20N120B

更新时间： 2023-12-06 20:13:07

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	570K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGQ20N120B 数据手册

High Voltage IGBT with Diode

V_CES

I_C25

= 1200 V

= 40 A

IXGQ 20N120B

IXGQ 20N120BD1

V_CE(sat)= 3.4 V

t_fi(typ)

= 160 ns

BD1

TO-3P(IXGQ)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

I_C25

I_C110

I_CM

T_C= 25°C

(TAB)

T_C= 110°C

T_C= 25°C, 1 ms

100

G = Gate

E = Emitter

C = Collector

TAB = Collector

SSOA

(RBSOA)

V_GE= 15 V, T_J= 125°C, R_G= 10 Ω

Clamped inductive load

I_CM= 40

@0.8 V_CES

P_C

T_C= 25°C

190

Features

^zInternational standard package

^zIGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

- Rice cookers

^zMOS Gate turn-on

- drive simplicity

^zFast Recovery Expitaxial Diode (FRED)

- soft recovery with low I_RM

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

M_d

Mounting torque

1.13/10 Nm/lb.in.

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Weight

Advantages

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

^zSaves space (two devices in one

package)

Easy to mount with 1 screw

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

(isolated mounting screw hole)

Reduces assembly time and cost

V_CE= V_CES

V_GE= 0 V

20N120B

20N120BD1

25 µA

50 µA

I_GES

V_CE= 0 V, V_GE= 20 V

100 nA

V_CE(sat)

I_C

= 20A_,V_GE= 15 V

2.9

2.8

3.4

Note 2

T_J=125°C

DS99136(12/03)

12 3 4 5 6 7

中文翻译

下载PDF

与IXGQ20N120B相关器件

型号	品牌	获取价格	描述	数据表
IXGQ20N120BD1	IXYS	获取价格	High Voltage IGBT with Diode
IXGQ240N30PB	IXYS	获取价格	Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ240N30PB	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ25N100Y4	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1KV V(BR)CES \| 25A I(C)
IXGQ25N50Y4	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 500V V(BR)CES \| 25A I(C)
IXGQ25N60Y4	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 600V V(BR)CES \| 25A I(C)
IXGQ25N90Y4	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 900V V(BR)CES \| 25A I(C)
IXGQ28N120B	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ28N120BD1	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ35N120BD1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN