生命周期: | Obsolete | 零件包装代码: | TO-3P |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 2 |
Reach Compliance Code: | unknown | 风险等级: | 5.64 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 90 A |
集电极-发射极最大电压: | 330 V | 配置: | SINGLE |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 124 ns | 标称接通时间 (ton): | 41 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGQ90N33TCD1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
IXGQ90N33TCD4 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P | |
IXGR120N60B | IXYS |
获取价格 |
HiPerFASTTM IGBT ISOPLUS247TM | |
IXGR120N60B | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGR120N60C2 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC, | |
IXGR12N60C | IXYS |
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Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN | |
IXGR16N170AH1 | IXYS |
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High Voltage IGBT with Diode Electrically Isolated Tab | |
IXGR16N170AH1 | LITTELFUSE |
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功能与特色: 应用:? | |
IXGR24N120C3D1 | IXYS |
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Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, TO-247 | |
IXGR24N120C3D1 | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 |