5秒后页面跳转
IXGQ90N33TC PDF预览

IXGQ90N33TC

更新时间: 2024-11-05 20:10:55
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
5页 144K
描述
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN

IXGQ90N33TC 技术参数

生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:2
Reach Compliance Code:unknown风险等级:5.64
外壳连接:COLLECTOR最大集电极电流 (IC):90 A
集电极-发射极最大电压:330 V配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):124 ns标称接通时间 (ton):41 ns
Base Number Matches:1

IXGQ90N33TC 数据手册

 浏览型号IXGQ90N33TC的Datasheet PDF文件第2页浏览型号IXGQ90N33TC的Datasheet PDF文件第3页浏览型号IXGQ90N33TC的Datasheet PDF文件第4页浏览型号IXGQ90N33TC的Datasheet PDF文件第5页 
Trench Gate,  
High Speed,  
IGBTs  
IXGA90N33TC  
IXGQ90N33TC  
IXGQ90N33TCD1  
VCES  
ICP  
= 330V  
= 360A  
VCE(sat) 1.80V  
For PDP Applications  
90N33TCD1  
90N33TC  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
TJ = 25°C to 150°C  
330  
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-263 AA (IXGA)  
IC25  
TC= 25°C (Chip Capability)  
Lead Current Limit  
TC = 110°C  
90  
75  
38  
60  
A
A
A
A
G
E
IC(RMS)  
IC110  
ICP  
C (Tab)  
TC < 150°C, tp < 10μs  
ICP  
TC < 150°C, tp < 10μs, Duty cycle < 1%  
360  
A
TO-3P (IXGQ)  
PC  
TC = 25°C  
200  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G
C
E
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
C (Tab)  
G = Gate  
E = Emitter  
C
= Collector  
Md  
Mounting Torque (TO-3P)  
1.13/10  
Nm/lb.in.  
Tab = Collector  
Weight  
TO-263  
TO-3P  
2.5  
5.5  
g
g
Features  
Symbol  
Test Conditions  
Characteristic Values  
Low VCE(sat)  
- for minimum On-State Conduction  
Losses  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
330  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Fast Switching  
5.0  
1
μA  
Applications  
TJ = 125°C  
200 μA  
PDP Screen Drivers  
IGES  
VCE = 0V, VGE = ±20V  
±200 nA  
VCE(sat)  
VGE = 15V, IC = 20A, Note 1  
IC = 45A  
1.40  
1.80  
V
V
V
V
V
1.54  
1.54  
1.82  
1.95  
TJ = 125°C  
TJ = 125°C  
IC = 90A  
© 2011 IXYS CORPORATION, All Rights Reserved  
DS99754B (07/11)  

与IXGQ90N33TC相关器件

型号 品牌 获取价格 描述 数据表
IXGQ90N33TCD1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ90N33TCD4 IXYS

获取价格

Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P
IXGR120N60B IXYS

获取价格

HiPerFASTTM IGBT ISOPLUS247TM
IXGR120N60B LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGR120N60C2 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC,
IXGR12N60C IXYS

获取价格

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
IXGR16N170AH1 IXYS

获取价格

High Voltage IGBT with Diode Electrically Isolated Tab
IXGR16N170AH1 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGR24N120C3D1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 48A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, TO-247
IXGR24N120C3D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30