5秒后页面跳转
IXGQ240N30PB PDF预览

IXGQ240N30PB

更新时间: 2024-02-15 10:49:20
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
5页 152K
描述
Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN

IXGQ240N30PB 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.73外壳连接:COLLECTOR
最大集电极电流 (IC):240 A集电极-发射极最大电压:300 V
配置:SINGLE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):500 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Pure Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):203 ns标称接通时间 (ton):133 ns
Base Number Matches:1

IXGQ240N30PB 数据手册

 浏览型号IXGQ240N30PB的Datasheet PDF文件第2页浏览型号IXGQ240N30PB的Datasheet PDF文件第3页浏览型号IXGQ240N30PB的Datasheet PDF文件第4页浏览型号IXGQ240N30PB的Datasheet PDF文件第5页 
PolarTM High Speed  
IGBT  
VCES = 300V  
ICP = 500A  
IXGQ240N30PB  
VCE(sat) 1.6V  
For PDP Applications  
TO-3P  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
300  
V
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
IC25  
ICP  
TC = 25°C (Chip Capability)  
TJ 150°C, tp < 10μs  
240  
500  
A
A
G = Gate  
C
= Collector  
IC(RMS)  
Lead Current Limit  
75  
A
E = Emitter Tab = Collector  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 1Ω  
ICM = 240  
A
(RBSOA)  
Clamped Inductive Load  
VCE VCES  
Pd  
TC = 25°C  
500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Low VCE(sat)  
-55 ... +150  
- for Minimum On-State Conduction  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Losses  
MOS Gate Turn-On  
- Drive Simplicity  
Md  
Mounting Torque  
1.13/10  
5.5  
Nm/lb.in.  
g
Weight  
Applications  
PDP Screen Drivers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified  
Min.  
300  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 1mA, VCE = VGE  
VCE = VCES, VGE= 0V  
V
V
5.0  
1
μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 120A, VGE = 15V, Note 1  
TJ = 125°C  
1.35  
1.40  
1.85  
2.10  
1.60  
V
V
V
V
IC = 240A  
TJ = 125°C  
© 2007 IXYS CORPORATION, All Rights Reserved  
DS99525C(06/07)  

与IXGQ240N30PB相关器件

型号 品牌 获取价格 描述 数据表
IXGQ25N100Y4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
IXGQ25N50Y4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 25A I(C)
IXGQ25N60Y4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 25A I(C)
IXGQ25N90Y4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 900V V(BR)CES | 25A I(C)
IXGQ28N120B LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ28N120BD1 LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ35N120BD1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN
IXGQ50N100Y4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 50A I(C)
IXGQ50N50Y4 ETC

获取价格

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 50A I(C)
IXGQ50N60C4D1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN