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IXGR120N60B PDF预览

IXGR120N60B

更新时间: 2023-12-06 20:13:11
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
6页 637K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGR120N60B 数据手册

 浏览型号IXGR120N60B的Datasheet PDF文件第2页浏览型号IXGR120N60B的Datasheet PDF文件第3页浏览型号IXGR120N60B的Datasheet PDF文件第4页浏览型号IXGR120N60B的Datasheet PDF文件第5页浏览型号IXGR120N60B的Datasheet PDF文件第6页 
HiPerFASTTM IGBT  
ISOPLUS247TM  
IXGR 120N60B  
VCES = 600 V  
IC25 = 156 A  
VCE(sat) = 2.1 V  
(Electrically Isolated Back Surface)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
IL(RMS)  
TC = 25°C  
TC = 110°C  
External lead limit  
156  
102  
76  
A
A
A
G = Gate,  
E=Emitter  
C = Collector  
ICM  
TC = 25°C, 1 ms  
300  
A
A
* Patent pending  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 2.4 Ω  
I
= 200  
(RBSOA)  
CGlaE mped inductive load  
@C0M.8 VCES  
520  
PC  
TC = 25°C  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z DCB Isolated mounting tab  
z Meets TO-247AD package Outline  
z High current handling capability  
z Latest generation HDMOSTM process  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
z MOS Gate turn-on  
- drive simplicity  
VISOL  
50/60 Hz, RMS, t = 1minute leads-to-tab  
2500  
5
V
g
Weight  
Applications  
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
Symbol  
BVCES  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z AC motor speed control  
IC = 1 mA, VGE = 0 V  
IC = 1 mA, VCE = VGE  
600  
2.5  
V
V
z DC servo and robot drives  
z DC choppers  
VGE(th)  
ICES  
5.5  
Advantages  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
TJJ = 150°C  
200 µA  
mA  
2
z Easy assembly  
z High power density  
IGES  
VCE = 0 V, VGE = 20 V  
400 nA  
2.1 V  
z Very fast switching speeds for high  
frequency applications  
VCE(sat)  
IC = 100A, VGE = 15 V (see note 1)  
© 2004 IXYS All rights reserved  
DS98744A(08/04)  

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