生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.73 |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 900 V |
门极-发射极最大电压: | 20 V | 元件数量: | 1 |
最高工作温度: | 150 °C | 最大功率耗散 (Abs): | 300 W |
子类别: | Insulated Gate BIP Transistors | VCEsat-Max: | 4.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGQ85N33PCD1 | IXYS |
获取价格 |
Advance Technical Information PolarTM High Speed IGBT with Anti-Parallel Diode |
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IXGQ90N27PB | IXYS |
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Preliminary Technical Information PolarTM IGBT for PDP Applications |
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IXGQ90N33TB | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN |
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IXGQ90N33TBD1 | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P |
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IXGQ90N33TBD1 | LITTELFUSE |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P |
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IXGQ90N33TC | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN |
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IXGQ90N33TCD1 | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, TO-3P, 3 PIN |
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IXGQ90N33TCD4 | IXYS |
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Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel, PLASTIC, TO-3P, 3 P |
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IXGR120N60B | IXYS |
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HiPerFASTTM IGBT ISOPLUS247TM |
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IXGR120N60B | LITTELFUSE |
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GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 |
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