Datasheet > IXGQ20N120B

IXGQ20N120B

更新时间： 2024-11-17 23:15:07

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
6页	599K
描述
High Voltage IGBT with Diode

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中文翻译

获取价格

数据手册

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IXGQ20N120B 数据手册

High Voltage IGBT with Diode

V_CES

I_C25

= 1200 V

= 40 A

IXGQ 20N120B

IXGQ 20N120BD1

V_CE(sat)= 3.4 V

t_fi(typ)

= 160 ns

BD1

TO-3P(IXGQ)

Symbol

TestConditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

1200

V_GES

V_GEM

Continuous

Transient

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1 ms

100

(TAB)

G = Gate

C = Collector

SSOA

= 15 V, T_J= 125°C, R_G= 10 Ω

I_CM= 40

C^Gla^Emped inductive load

@0.8 V_CES

E = Emitter

TAB = Collector

(RBSOA)

P_C

T_C= 25°C

190

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

International standard package

IGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

M_d

Mounting torque

1.13/10 Nm/lb.in.

- Rice cookers

MOS Gate turn-on

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

- drive simplicity

Fast Recovery Expitaxial Diode (FRED)

- soft recovery with low I_RM

Weight

Advantages

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Saves space (two devices in one

package)

Easy to mount with 1 screw

(isolated mounting screw hole)

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

Reduces assembly time and cost

V_CE= V

20N120B

25 µA

50 µA

V_GE= 0^CV^ES

20N120BD1

I_GES

V_CE= 0 V, V_GE= 20 V

100 nA

V_CE(sat)

I_C

= 20A_,V_GE= 15 V

2.9

2.8

3.4

Note 2

T_J=125°C

DS99136(12/03)

12 3 4 5 6

中文翻译

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