是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-3P |
包装说明: | TO-3P, 3 PIN | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.72 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 170 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 259 ns |
标称接通时间 (ton): | 103 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGQ200N100Y3 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 200A I(C) | |
IXGQ200N100Y4 | IXYS |
获取价格 |
Transistor | |
IXGQ200N60Y3 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) | |
IXGQ20N120B | IXYS |
获取价格 |
High Voltage IGBT with Diode | |
IXGQ20N120B | LITTELFUSE |
获取价格 |
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 | |
IXGQ20N120BD1 | IXYS |
获取价格 |
High Voltage IGBT with Diode | |
IXGQ240N30PB | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
IXGQ240N30PB | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 240A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
IXGQ25N100Y4 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C) | |
IXGQ25N50Y4 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 25A I(C) |