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IXGQ170N30PB PDF预览

IXGQ170N30PB

更新时间: 2024-11-18 20:57:31
品牌 Logo 应用领域
IXYS
页数 文件大小 规格书
5页 110K
描述
Insulated Gate Bipolar Transistor, 170A I(C), 300V V(BR)CES, N-Channel, TO-3P, 3 PIN

IXGQ170N30PB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3P
包装说明:TO-3P, 3 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72外壳连接:COLLECTOR
最大集电极电流 (IC):170 A集电极-发射极最大电压:300 V
配置:SINGLEJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):259 ns
标称接通时间 (ton):103 nsBase Number Matches:1

IXGQ170N30PB 数据手册

 浏览型号IXGQ170N30PB的Datasheet PDF文件第2页浏览型号IXGQ170N30PB的Datasheet PDF文件第3页浏览型号IXGQ170N30PB的Datasheet PDF文件第4页浏览型号IXGQ170N30PB的Datasheet PDF文件第5页 
Preliminary Technical Information  
PolarTM High Speed  
IGBT  
VCES  
ICP  
= 300 V  
= 360 A  
IXGQ170N30PB  
VCE(sat) 1.70 V  
for PDP Applications  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P  
VCES  
VGEM  
TJ = 25°C to 150°C  
300  
V
V
±30  
G
C
IC25  
TC = 25°C, IGBT chip capability  
TJ 150°C, tp < 10 μs  
Lead current limit  
170  
360  
75  
A
A
A
E
(TAB)  
C = Collector  
TAB = Collector  
ICP  
G = Gate  
E = Emitter  
IC(RMS)  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 20 Ω  
ICM = 170  
A
Features  
(RBSOA) Clamped inductive load, VCE < 300 V  
International standard package  
Low VCE(sat)  
PC  
TC = 25°C  
330  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- for minimum on-state conduction  
losses  
MOS Gate turn-on  
- drive simplicity  
TL  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum plastic body temperature for 10 s. 260  
300  
°C  
°C  
TSOLD  
Md  
Applications  
PDP Screen Drivers  
Mounting torque  
1.13/10 Nm/lb.in.  
5.5  
Weight  
g
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 1 mA, VCE = VGE  
3.0  
5.0  
V
VCE = 300 V  
VGE = 0 V  
1 μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
VGE = 15V,  
Note 1  
IC = 85 A  
1.32 1.70  
V
V
V
V
TJ = 125°C  
IC = 170 A  
TJ = 125°C  
1.36  
1.73  
1.89  
© 2006 IXYS All rights reserved  
DS99558A(05/06)  

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