IXGP7N60BD1

更新时间： 2024-01-31 01:54:48

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
2页	81K
描述
HiPerFAST IGBT with Diode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGP7N60BD1 数据手册

Advanced Technical Information

HiPerFAST^TMIGBT

withDiode

V_CES

I_C25

V_CE(sat)

t_fi

= 600 V

= 14 A

= 2.0 V

= 150ns

IXGA 7N60BD1

IXGP 7N60BD1

Symbol

TestConditions

Maximum Ratings

TO-220AB(IXGP)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

TO-263AA(IXGA)

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 18 Ω

Clamped inductive load @ 0.8 V_CES

I_CM= 14

C (TAB)

P_C

T_C= 25°C

T_J

-55 ... +150

150

°C

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_JM

T_stg

-55 ... +150

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

• International standard packages

JEDEC TO-263 surface

mountable and JEDEC TO-220 AB

• High current handling capability

• HiPerFAST^TMHDMOS^TMprocess

• MOS Gate turn-on

M_d

Mounting torque, (TO-220)

M3.5

0.45/4 Nm/lb.in.

0.55/5 Nm/lb.in.

Weight

TO-220

TO-263

- drive simplicity

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode

power supplies

min. typ. max.

• AC motor speed control

• DC servo and robot drives

• DC choppers

BV_CES

V_GE(th)

I_C= 250 µA, V_GE= 0 V

I_C= 250 µA, V_CE= V_GE

600

2.5

5.5

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

100 µA

750 µA

Advantages

• High power density

• Suitable for surface mounting

I_GES

V_CE= 0 V, V_GE= ±20 V

I_C= I_C90, V_GE= 15 V

±100 nA

V_CE(sat)

1.8

2.0

DS98977(12/02)

下载PDF

与IXGP7N60BD1相关器件

型号	品牌	描述	获取价格	数据表
IXGP7N60C	IXYS	HiPerFAST IGBT Lightspeed Series	获取价格
IXGP7N60CD1	IXYS	HiPerFAST IGBT with Diode Lightspeed Series	获取价格
IXGP8N100	IXYS	IXGA8N100	获取价格
IXGP8N100	LITTELFUSE	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对	获取价格
IXGQ100N100Y3	ETC	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1KV V(BR)CES \| 100A I(C)	获取价格
IXGQ100N50Y4	ETC	TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 500V V(BR)CES \| 100A I(C)	获取价格