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IXGP48N60C3 PDF预览

IXGP48N60C3

更新时间: 2024-11-18 11:14:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
6页 222K
描述
GenX3 600V IGBT

IXGP48N60C3 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.65外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE门极发射器阈值电压最大值:5.5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):187 ns标称接通时间 (ton):45 ns
Base Number Matches:1

IXGP48N60C3 数据手册

 浏览型号IXGP48N60C3的Datasheet PDF文件第2页浏览型号IXGP48N60C3的Datasheet PDF文件第3页浏览型号IXGP48N60C3的Datasheet PDF文件第4页浏览型号IXGP48N60C3的Datasheet PDF文件第5页浏览型号IXGP48N60C3的Datasheet PDF文件第6页 
GenX3TM 600V IGBT  
IXGA48N60C3  
IXGH48N60C3  
IXGP48N60C3  
VCES = 600V  
IC110 = 48A  
VCE(sat) 2.5V  
tfi(typ) = 38ns  
High Speed PT IGBTs for  
40-100kHz switching  
TO-263 (IXGA)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
E
(TAB)  
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-247 (IXGH)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
TC = 25°C ( Limited by Leads)  
TC = 110°C  
75  
48  
A
A
G
ICM  
TC = 25°C, 1ms  
250  
A
(TAB)  
C
E
IA  
TC = 25°C  
TC = 25°C  
30  
A
EAS  
300  
mJ  
TO-220 (IXGP)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load @ 600V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
300  
W
(TAB)  
G
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C
= Collector  
-55 ... +150  
E = Emitter  
TAB = Collector  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
Features  
TSOLD  
Md  
Mounting Torque (TO-247&TO-220)  
1.13/10  
Nm/lb.in.  
z Optimized for Low Switching Losses  
z Square RBSOA  
Weight  
TO-247  
TO-220  
TO-263  
6.0  
3.0  
2.5  
g
g
g
z Avalanche Rated  
z Fast Switching  
z International Standard Packages  
Advantages  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z High Power Density  
z Low Gate Drive Requirement  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
5.5  
Applications  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
250 μA  
z High Frequency Power Inverters  
z UPS  
TJ = 125°C  
z Motor Drives  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.5  
V
V
© 2009 IXYS CORPORATION, All rights reserved  
DS99953A(01/09)  

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