是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | TO-220AB | 包装说明: | TO-220, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.65 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 75 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 门极发射器阈值电压最大值: | 5.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 300 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 187 ns | 标称接通时间 (ton): | 45 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGP4N100 | IXYS |
获取价格 |
ADVANCED TECHNICAL INFORMATION | |
IXGP50N33TBM-A | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, PLASTIC, | |
IXGP50N60B4 | IXYS |
获取价格 |
High-Gain IGBTs | |
IXGP50N60C4 | IXYS |
获取价格 |
High-Gain IGBTs | |
IXGP7N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGP7N60BD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode | |
IXGP7N60C | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGP7N60CD1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode Lightspeed Series | |
IXGP8N100 | IXYS |
获取价格 |
IXGA8N100 | |
IXGP8N100 | LITTELFUSE |
获取价格 |
IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对 |