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IXGP50N33TBM-A PDF预览

IXGP50N33TBM-A

更新时间: 2024-11-05 19:44:11
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网功率控制晶体管
页数 文件大小 规格书
5页 148K
描述
Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, PLASTIC, TO-220, 3 PIN

IXGP50N33TBM-A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.29外壳连接:ISOLATED
最大集电极电流 (IC):30 A集电极-发射极最大电压:330 V
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):344 ns标称接通时间 (ton):45 ns
Base Number Matches:1

IXGP50N33TBM-A 数据手册

 浏览型号IXGP50N33TBM-A的Datasheet PDF文件第2页浏览型号IXGP50N33TBM-A的Datasheet PDF文件第3页浏览型号IXGP50N33TBM-A的Datasheet PDF文件第4页浏览型号IXGP50N33TBM-A的Datasheet PDF文件第5页 
Preliminary Technical Information  
Trench Gate  
IGBT  
IXGP50N33TBM-A  
VCES  
ICP  
VCE(sat) 1.6V  
= 330V  
= 200A  
For PDP Applications  
OVERMOLDED TO-220 W/ FORMED  
LEAD (IXGP...M-A)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VGEM  
TJ = 25°C to 150°C  
330  
V
V
Transient  
±30  
IC25  
TC = 25°C  
30  
200  
75  
A
A
A
C
G
ICP  
TJ 150°C, tp 10μs, duty cycle 1%  
Lead current limit  
IC(RMS)  
Isolated Tab  
E
PC  
TC = 25°C  
50  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
E = Emitter  
C = Collector  
TAB = Isolated  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
Features  
Md  
Mounting torque  
1.13/10  
2.5  
Nm/lb.in.  
g
Fast switching  
Weight  
Plastic overmolded tab for electrical  
iLsoowlatVioCnE(sat)  
- for minimum on-state conduction  
losses  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
330  
3.0  
Typ. Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA ,VGE = 0V  
IC = 250μA , VCE = VGE  
VCE = 330V  
V
V
Applications  
5.0  
2
μA  
PDP Systems  
VGE = 0V  
TJ = 125°C  
125 μA  
Capacitive load circuits  
Switching power supplies  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
VGE = 15V, IC = 25A  
1.37  
1.35  
1.71  
1.76  
1.60  
V
V
V
V
TJ = 125°C  
TJ = 125°C  
IC = 50A  
DS99930(12/07)  
© 2007 IXYS CORPORATION, All rights reserved  

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