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IXGP36N60A3_09 PDF预览

IXGP36N60A3_09

更新时间: 2024-11-05 12:52:39
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 839K
描述
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

IXGP36N60A3_09 数据手册

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IXYS  
POWER  
ꢀ ꢁ w p r o D u c T B r I ꢁ f  
Efficiency through T e chnology  
600V GenX3™ IGBTs  
ꢀꢁXT GꢁꢀꢁraTIoꢀ 600V IGBTꢂ for powꢁr coꢀVꢁrꢂIoꢀ applIcaTIoꢀꢂ  
jaꢀuary 2009  
oVꢁrVIꢁw  
IXYS extends its GenX3TM insulated gate bipolar transistor (IGBT) product line to  
600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM  
IGBT process and uꢀlize IXYS’ advanced Punch-Though (PT) technology, tailored  
to provide higher surge current capabiliꢀes, lower saturaꢀon voltages, and lower  
switching losses.  
To accommodate opꢀmum part selecꢀon, designers have a choice in selecꢀng  
between three sub-classes denoted A3, B3, and C3. These classificaꢀons allow  
designers to “dial in” the best compromise between staꢀc (conducꢀon) and  
dynamic (switching) losses, improving over-all system efficiency in a variety of  
power conversion applicaꢀons by balancing criꢀcal requirements such as switching  
frequency, efficiency, and cost structure. The A3-Class are opꢀmized for low  
saturaꢀon voltage V(sat) and are well suited for applicaꢀons requiring switching  
frequencies up to 5kHz. Similarly, the B3-Class offers low saturaꢀon voltages, but  
is opꢀmized to accommodate applicaꢀons that require “medium speed” switching  
operaꢀon from 5kHz to 40kHz. The C3-Class is opꢀmized for “high speed” switching  
operaꢀon from 40kHz to 100kHz and resonant switching operaꢀon of up to  
400kHz.  
IXYS 600V GenX3TM IGBTs are offered in various standard packages, including the  
full gamut of surface mount and discrete packages with current raꢀngs from 36  
amperes to 210 amperes. Furthermore, some devices will be offered in PLUS and  
ISOPLUS isolated packages, featuring UL recognized 2500V isolaꢀon and superior  
thermal performance. Co-Packed variants of these new devices are available with  
IXYS’ HiPerFREDTM ultra-fast recovery diodes providing excepꢀonal fast recovery  
and soꢁ switching characterisꢀcs.  
These IGBTs are designed to achieve the opꢀmal soluꢀon in applicaꢀons such as  
power inverters, UPS, motor drives, SMPS, PFC, baꢂery chargers, welding machines,  
lamp ballasts, inrush current protecꢀon circuits and DC choppers.  
ꢃꢃꢃ.ixꢄs.ꢅꢆm  

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