Datasheet > IXGP36N60A3_09

IXGP36N60A3_09

更新时间： 2024-11-18 12:52:39

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
4页	839K
描述
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGP36N60A3_09 数据手册

IXYS

POWER

ꢀ ꢁ w p r o D u c T B r I ꢁ f

Efficiency through T e chnology

600V GenX3™ IGBTs

ꢀꢁXT GꢁꢀꢁraTIoꢀ 600V IGBTꢂ for powꢁr coꢀVꢁrꢂIoꢀ applIcaTIoꢀꢂ

jaꢀuary 2009

oVꢁrVIꢁw

IXYS extends its GenX3^TMinsulated gate bipolar transistor (IGBT) product line to

600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3^TM

IGBT process and uꢀlize IXYS’ advanced Punch-Though (PT) technology, tailored

to provide higher surge current capabiliꢀes, lower saturaꢀon voltages, and lower

switching losses.

To accommodate opꢀmum part selecꢀon, designers have a choice in selecꢀng

between three sub-classes denoted A3, B3, and C3. These classiﬁcaꢀons allow

designers to “dial in” the best compromise between staꢀc (conducꢀon) and

dynamic (switching) losses, improving over-all system eﬃciency in a variety of

power conversion applicaꢀons by balancing criꢀcal requirements such as switching

frequency, eﬃciency, and cost structure. The A3-Class are opꢀmized for low

saturaꢀon voltage V(sat) and are well suited for applicaꢀons requiring switching

frequencies up to 5kHz. Similarly, the B3-Class oﬀers low saturaꢀon voltages, but

is opꢀmized to accommodate applicaꢀons that require “medium speed” switching

operaꢀon from 5kHz to 40kHz. The C3-Class is opꢀmized for “high speed” switching

operaꢀon from 40kHz to 100kHz and resonant switching operaꢀon of up to

400kHz.

IXYS 600V GenX3^TMIGBTs are oﬀered in various standard packages, including the

full gamut of surface mount and discrete packages with current raꢀngs from 36

amperes to 210 amperes. Furthermore, some devices will be oﬀered in PLUS and

ISOPLUS isolated packages, featuring UL recognized 2500V isolaꢀon and superior

thermal performance. Co-Packed variants of these new devices are available with

IXYS’ HiPerFRED^TMultra-fast recovery diodes providing excepꢀonal fast recovery

and soꢁ switching characterisꢀcs.

These IGBTs are designed to achieve the opꢀmal soluꢀon in applicaꢀons such as

power inverters, UPS, motor drives, SMPS, PFC, baꢂery chargers, welding machines,

lamp ballasts, inrush current protecꢀon circuits and DC choppers.

ꢃꢃꢃ.ixꢄs.ꢅꢆm

12 3 4

中文翻译

下载PDF

与IXGP36N60A3_09相关器件

型号	品牌	获取价格	描述	数据表
IXGP42N30C3	IXYS	获取价格	GenX3 300V IGBT
IXGP48N60A3	IXYS	获取价格	GenX3 600V IGBT
IXGP48N60A3	LITTELFUSE	获取价格	IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对
IXGP48N60B3	IXYS	获取价格	GenX3 600V IGBT
IXGP48N60B3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP48N60C3	IXYS	获取价格	GenX3 600V IGBT
IXGP48N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP4N100	IXYS	获取价格	ADVANCED TECHNICAL INFORMATION
IXGP50N33TBM-A	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, PLASTIC,
IXGP50N60B4	IXYS	获取价格	High-Gain IGBTs

与IXGP36N60A3_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

IXGP36N60A3_09

IXGP36N60A3_09 数据手册

与IXGP36N60A3_09相关器件

与IXGP36N60A3_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IXGP36N60A3_09

IXGP36N60A3_09 数据手册

与IXGP36N60A3_09相关器件

与IXGP36N60A3_09相关文章

您还可以找

您在本页遇到什么问题？