Datasheet > IXGP48N60A3

IXGP48N60A3

更新时间： 2024-04-09 18:40:52

品牌	Logo	应用领域
力特 - LITTELFUSE		超快恢复二极管开关双极性晶体管
页数	文件大小	规格书
7页	262K
描述
IXYS系列穿通型（PT）IGBT具有高增益、极快速切换和低传导损耗等优点。这些产品针对UPS、离线式开关电源和电磁炉等高达100kHz的高速应用进行了优化。 G系列可提供带集成式超快恢复二极管（FRED）或不带FRED的型号。

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGP48N60A3 数据手册

GenX3^TM600V

IGBTs

IXGA48N60A3

IXGP48N60A3

IXGH48N60A3

V_CES= 600V

I_C110= 48A

V_CE(sat)≤ 1.35V

Ultra Low Vsat PT IGBTs for

up to 5kHz switching

TO-263 (IXGA)

Symbol

Test Conditions

Maximum Ratings

C (Tab)

V_CES

V_CGR

T_J= 25°C to 150°C

600

TO-220 (IXGP)

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C110

T_C= 25°C

T_C= 110°C

120

C (Tab)

I_CM

T_C= 25°C, 1ms

300

TO-247 (IXGH)

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 96

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

P_C

T_C= 25°C

300

T_J

T_JM

T_stg

-55 ... +150

150

°C

C (Tab)

-55 ... +150

G = Gate

= Collector

E = Emitter

Tab = Collector

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

F_C

M_d

Mounting Force (TO-263)

Mounting Torque (TO-220 & TO-247)

10..65 / 2.2..14.6

1.13 / 10

N/lb.

Nm/lb.in.

Features

Optimized for Low Conduction Losses

Square RBSOA

High Current Handling Capability

International Standard Packages

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Advantages

High Power Density

Low Gate Drive Requirement

Symbol Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min.

600

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Applications

5.5

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

25 μA

T_J= 125°C

250 μA

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

1.18

1.35

Inrush Current Protection Circuits

DS99581D(03/12)

12 3 4 5 6 7

下载PDF

与IXGP48N60A3相关器件

型号	品牌	描述	获取价格	数据表
IXGP48N60B3	IXYS	GenX3 600V IGBT	获取价格
IXGP48N60B3	LITTELFUSE	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30	获取价格
IXGP48N60C3	IXYS	GenX3 600V IGBT	获取价格
IXGP48N60C3	LITTELFUSE	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30	获取价格
IXGP4N100	IXYS	ADVANCED TECHNICAL INFORMATION	获取价格
IXGP50N33TBM-A	LITTELFUSE	Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, PLASTIC,	获取价格