5秒后页面跳转
IXGP48N60A3 PDF预览

IXGP48N60A3

更新时间: 2024-11-18 11:14:11
品牌 Logo 应用领域
IXYS 晶体晶体管功率控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
6页 221K
描述
GenX3 600V IGBT

IXGP48N60A3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.63
Is Samacsys:N其他特性:LOW CONDUCTION LOSS
外壳连接:COLLECTOR最大集电极电流 (IC):48 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):925 ns
标称接通时间 (ton):54 nsBase Number Matches:1

IXGP48N60A3 数据手册

 浏览型号IXGP48N60A3的Datasheet PDF文件第2页浏览型号IXGP48N60A3的Datasheet PDF文件第3页浏览型号IXGP48N60A3的Datasheet PDF文件第4页浏览型号IXGP48N60A3的Datasheet PDF文件第5页浏览型号IXGP48N60A3的Datasheet PDF文件第6页 
GenX3TM 600V IGBT  
IXGA48N60A3  
IXGH48N60A3  
IXGP48N60A3  
VCES = 600V  
IC110 = 48A  
VCE(sat) 1.35V  
Ultra Low Vsat PT IGBT for  
up to 5kHz switching  
TO-263 (IXGA)  
G
E
(TAB)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TO-247 (IXGH)  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC110  
ICM  
TC = 110°C  
48  
A
A
G
TC = 25°C, 1ms  
300  
(TAB)  
C
E
SSOA  
VGE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 96  
A
(RBSOA)  
Clamped inductive load @ 600V  
TO-220 (IXGP)  
PC  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
(TAB)  
G
C
E
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
G = Gate  
C
= Collector  
Md  
Mounting torque (TO-247 & TO-220)  
1.13/10  
Nm/lb.in.  
E = Emitter  
TAB = Collector  
Weight  
TO-247  
TO-220  
TO-263  
6.0  
3.0  
2.5  
g
g
g
Features  
z Optimized for low conduction losses  
z International standard packages  
Advantages  
z High power density  
z Low gate drive requirement  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
Applications  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
z Power Inverters  
z UPS  
5.0  
z Motor Drives  
ICES  
VCE = VCES  
VGE = 0V  
25 μA  
250 μA  
z SMPS  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
z Inrush Current Protection Circuits  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 32A, VGE = 15V, Note 1  
1.18  
1.35  
V
© 2008 IXYS CORPORATION, All rights reserved  
DS99581B(07/08)  

与IXGP48N60A3相关器件

型号 品牌 获取价格 描述 数据表
IXGP48N60B3 IXYS

获取价格

GenX3 600V IGBT
IXGP48N60B3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGP48N60C3 IXYS

获取价格

GenX3 600V IGBT
IXGP48N60C3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGP4N100 IXYS

获取价格

ADVANCED TECHNICAL INFORMATION
IXGP50N33TBM-A LITTELFUSE

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, PLASTIC,
IXGP50N60B4 IXYS

获取价格

High-Gain IGBTs
IXGP50N60C4 IXYS

获取价格

High-Gain IGBTs
IXGP7N60B IXYS

获取价格

HiPerFAST IGBT
IXGP7N60BD1 IXYS

获取价格

HiPerFAST IGBT with Diode