Datasheet > IXGP30N60C3C1

IXGP30N60C3C1

更新时间： 2024-02-26 06:48:55

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
7页	281K
描述
GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

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技术参数
数据手册

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IXGP30N60C3C1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

IXGP30N60C3C1 数据手册

Preliminary Technical Information

GenX3^TM600V IGBT

w/ SiC Anti-Parallel

Diode

V_CES= 600V

I_C110= 30A

V_CE(sat)≤ 3.0V

t_fi(typ)= 47ns

IXGA30N60C3C1

IXGP30N60C3C1

IXGH30N60C3C1

High Speed PT IGBTs for

40 - 100kHz Switching

TO-263(IXGA)

C (TAB)

Symbol Test Conditions

Maximum Ratings

TO-220(IXGP)

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

C (TAB)

I_C25

I_C110

I_F110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

TO-247(IXGH)

150

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 60

(RBSOA)

Clamped Inductive Load

@ ≤ V_CES

P_C

T_C= 25°C

220

C (TAB)

T_J

-55 ... +150

150

°C

T_JM

T_stg

G = Gate

E = Emitter

= Collector

TAB = Collector

-55 ... +150

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

T_SOLD

^ꢀOptimized for Low Switching Losses

^ꢀSquareRBSOA

^ꢀAnti-Parallel Schottky Diode

^ꢀInternational Standard Packages

M_d

Mounting Torque (TO-220 & TO-247)

1.13/10

Nm/lb.in.

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Advantages

^ꢀHigh Power Density

^ꢀLow Gate Drive Requirement

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.5

5.5

Applications

V_CE= V_CES, V_GE= 0V

25 μA

300 μA

^ꢀHigh Frequency Power Inverters

^ꢀUPS

T_J= 125°C

^ꢀMotorDrives

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

^ꢀSMPS

V_CE(sat)

I_C= 20A, V_GE= 15V, Note 1

2.6

1.8

3.0

^ꢀPFCCircuits

^ꢀBatteryChargers

^ꢀWeldingMachines

^ꢀLampBallasts

DS100142A(06/09)

12 3 4 5 6 7

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