Datasheet > IXGP30N60C3D4

IXGP30N60C3D4

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
7页	281K
描述
GenX3 600V IGBT With Diode

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中文翻译

获取价格

数据手册

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IXGP30N60C3D4 数据手册

Preliminary Technical Information

GenX3^TM600V IGBT IXGA30N60C3D4

V_CES= 600V

I_C110= 30A

V_CE(sat)≤ 3.0V

t_fi(typ)= 47ns

WithDiode

IXGP30N60C3D4

High Speed PT IGBTs for

40-100kHz switching

TO-263(IXGA)

Symbol Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

C(TAB)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-220(IXGP)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

150

C(TAB)

SSOA

_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 60

(RBSOA)

Clamped inductive load @ ≤ 600V

P_C

T_C= 25°C

220

G = Gate

= Collector

E = Emitter

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

T_L

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

^ꢀOptimized for low switching losses

^ꢀSquareRBSOA

T_SOLD

M_d

Mounting torque (TO-220)

1.13/10

Nm/lb.in.

^ꢀAnti-parallel ultra fast diode

^ꢀInternational standard packages

Weight

TO-220

TO-263

2.5

3.0

Advantages

^ꢀHigh power density

^ꢀLow gate drive requirement

Symbol Test Conditions

Characteristic Values

Applications

(T_J= 25°C unless otherwise specified)

Min.

600

3.5

Typ.

Max.

^ꢀHigh Frequency Power Inverters

^ꢀUPS

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES

5.5

^ꢀMotorDrives

75 μA

500 μA

^ꢀSMPS

V_GE= 0V

T_J= 125°C

^ꢀPFCCircuits

I_GES

V_CE= 0V, V_GE= ± 20V

I_C= 20A, V_GE= 15V, Note 1

±100 nA

^ꢀBatteryChargers

^ꢀWeldingMachines

^ꢀLampBallasts

V_CE(sat)

2.6

1.8

3.0

DS100073(11/08)

12 3 4 5 6 7

中文翻译

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