Datasheet > IXGP30N60C2

IXGP30N60C2

更新时间： 2024-11-05 03:14:35

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
5页	554K
描述
HiPerFAST IGBT C2- Class High Speed IGBTs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGP30N60C2 数据手册

HiPerFAST^TMIGBT

V_CES

I_C25

= 600 V

= 70 A

IXGP 30N60C2

C2- Class High Speed IGBTs

V_CE(sat)= 2.7 V

t_fityp

= 32 ns

Symbol

Test Conditions

Maximum Ratings

TO-220 (IXGP)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

600

V_GES

V_GEM

Continuous

Transient

C (TAB)

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 25°C, 1 ms

150

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

SSOA

(RBSOA)

P_C

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped inductive load @ ≤ 600 V

T_C= 25°C

I_CM= 60

Features

190

Very high frequency IGBT

Square RBSOA

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

High current handling capability

MOS Gate turn-on

- drive simplicity

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Applications

M_d

Mounting torque

1.13/10Nm/lb.in.

PFC circuits

Uninterruptible power supplies (UPS)

Weight

Switched-mode and resonant-mode

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

V_CE= V

T = 25°C

µA

V_GE= 0^CV^ES

T_J^J= 150°C

100

2.7

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 24 A, V_GE= 15 V

V_CE(sat)

T_J= 25°C

DS99170A(01/05)

12 3 4 5

中文翻译

下载PDF

与IXGP30N60C2相关器件

型号	品牌	获取价格	描述	数据表
IXGP30N60C3	IXYS	获取价格	GenX3 600V IGBT
IXGP30N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP30N60C3C1	IXYS	获取价格	GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGP30N60C3C1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP30N60C3D4	IXYS	获取价格	GenX3 600V IGBT With Diode
IXGP30N60C3D4	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP36N60A3	IXYS	获取价格	GenX3 600V IGBT
IXGP36N60A3	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXGP36N60A3_09	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGP42N30C3	IXYS	获取价格	GenX3 300V IGBT