Datasheet > IXGP30N60C2

IXGP30N60C2

更新时间： 2024-01-02 01:48:37

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
5页	554K
描述
HiPerFAST IGBT C2- Class High Speed IGBTs

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数据手册

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IXGP30N60C2 数据手册

HiPerFAST^TMIGBT

V_CES

I_C25

= 600 V

= 70 A

IXGP 30N60C2

C2- Class High Speed IGBTs

V_CE(sat)= 2.7 V

t_fityp

= 32 ns

Symbol

Test Conditions

Maximum Ratings

TO-220 (IXGP)

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GE= 1 MΩ

600

V_GES

V_GEM

Continuous

Transient

C (TAB)

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

T_C= 25°C, 1 ms

150

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

SSOA

(RBSOA)

P_C

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

Clamped inductive load @ ≤ 600 V

T_C= 25°C

I_CM= 60

Features

190

Very high frequency IGBT

Square RBSOA

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

High current handling capability

MOS Gate turn-on

- drive simplicity

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Applications

M_d

Mounting torque

1.13/10Nm/lb.in.

PFC circuits

Uninterruptible power supplies (UPS)

Weight

Switched-mode and resonant-mode

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

V_CE= V

T = 25°C

µA

V_GE= 0^CV^ES

T_J^J= 150°C

100

2.7

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= 24 A, V_GE= 15 V

V_CE(sat)

T_J= 25°C

DS99170A(01/05)

12 3 4 5

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