Datasheet > IXGP28N60A3M

IXGP28N60A3M

更新时间： 2024-11-20 20:04:39

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	175K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXGP28N60A3M 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

IXGP28N60A3M 数据手册

Advance Technical Information

GenX3^TM600V

IGBT

V_CES= 600V

I_C110= 15A

V_CE(sat) 1.4V

IXGP28N60A3M

Ultra Low Vsat PT IGBT for up

to 5kHz Switching

OVERMOLDED TO-220

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

±20

±30

G = Gate

E = Emitter

= Collector

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

200

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 10

I_CM= 48

(RBSOA)

Clamped Inductive Load

@V_CE V_CES

P_C

T_C= 25°C

T_J

T_JM

T_stg

-55 ... +150

150

°C

Features



Plastic Overmolded Tab

-55 ... +150



Optimized for Low Conduction Losses

Square RBSOA

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

International Standard Package

M_d

Mounting Torque

1.13 / 10

3.0

Nm/lb.in

Advantages

Weight



High Power Density

Extremely Rugged

Low Gate Drive Requirement



Applications

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

600

3.0

Typ.

Max.

Power Inverters

UPS

Motor Drives

SMPS



BV_CES

V_GE(th)

I_CES

I_C= 250A, V_GE= 0V

I_C= 250A, V_CE= V_GE

V_CE= V_CES, V_GE= 0V



5.0



PFC Circuits

25 A



Battery Chargers

Welding Machines

Lamp Ballasts

Inrush Current Portection Circuits

T_J= 125C

250 A



I_GES

V_CE= 0V, V_GE= 20V

100 nA



V_CE(sat)

I_C= 24A, V_GE= 15V, Note 1

1.4

1.3

DS100734(6/16)

12 3 4 5 6 7

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