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IXGP2N100A PDF预览

IXGP2N100A

更新时间: 2024-01-04 07:15:01
品牌 Logo 应用领域
IXYS 双极性晶体管高压
页数 文件大小 规格书
2页 87K
描述
High Voltage IGBT

IXGP2N100A 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.68外壳连接:COLLECTOR
最大集电极电流 (IC):4 A集电极-发射极最大电压:1000 V
配置:SINGLE门极发射器阈值电压最大值:8 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.1 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):100 ns标称接通时间 (ton):100 ns
Base Number Matches:1

IXGP2N100A 数据手册

 浏览型号IXGP2N100A的Datasheet PDF文件第2页 
VCES  
IC90  
VCE(SAT)  
High Voltage IGBT  
IXGP 2N100 1000 V 2.0 A  
IXGP 2N100A 1000 V 2.0 A  
2.7 V  
3.5 V  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TO-220  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VCGR  
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
1
4
IC25  
IC90  
ICM  
TC = 25°C  
4
2
8
A
A
A
2
3
TC = 90°C  
TC = 25°C, 1 ms  
1 = Gate  
3 = Emitter  
2 = Collector  
4 = Collector  
SSOA  
VGE = 15 V, TJ = 125°C, RG = 150W  
ICM = 6  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
PC  
TC = 25°C  
25  
W
TJ  
-55 ... +150  
150  
°C  
°C  
TJM  
TSTG  
-55 ... +150  
°C  
g
Weight  
4
Features  
Max. Lead Temperature for  
300  
°C  
Soldering (1.6mm from case for 10s)  
• International standard package  
• Low VCE(sat)  
- for low on-state conduction losses  
• High current handling capability  
• MOS Gate turn-on  
Symbol  
Test Conditions  
Characteristic Values  
- drive simplicity  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 25µA, VGE = 0 V  
IC = 25µA, VCE = VGE  
1000  
V
V
Applications  
2.5  
5.0  
VCE = 0.8 VCES  
VGE = 0 V  
TJ  
=
25°C  
10 µA  
• Capacitor discharge  
• Anode triggering of thyristors  
• DC choppers  
TJ = 125°C  
200 µA  
IGES  
VCE = 0 V, VGE = ±20 V  
IC = IC90, VGE = 15 V  
+ 50 nA  
VCE(sat)  
IXGP2N100  
IXGP2N100A  
2.7  
3.5  
V
V
• Switched-mode and resonant-mode  
power supplies.  
© 2000 IXYS All rights reserved  
95514C (9/00)  

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