Datasheet > IXGP30N120B3

IXGP30N120B3

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	238K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGP30N120B3 数据手册

GenX3^TM1200V

IGBTs

IXGA30N120B3

IXGP30N120B3

IXGH30N120B3

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 1200V

= 30A

≤£ 3.5V

= 204ns

High-Speed Low-Vsat PT

IGBTs 3-20 kHz Switching

TO-263 (IXGA)

Symbol

Test Conditions

Maximum Ratings

C (Tab)

V_CES

V_CGR

T_C= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

TO-220 (IXGP)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

150

C (Tab)

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 60

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

TO-247 (IXGH)

P_C

T_C= 25°C

300

T_J

- 55 ... +150

150

°C

T_JM

T_stg

- 55 ... +150

C (Tab)

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

G = Gate

E = Emitter

Tab

Collector

T_SOLD

M_d

Mounting Torque (TO-220 & TO-247)

1.13/10

Nm/lb.in.

Weight

TO-263

TO-220

TO-247

2.5

3.0

6.0

Features

^zOptimized for Low Conduction and

Switching Losses

^zSquare RBSOA

^zInternational Standard Packages

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

^zHigh Power Density

^zLow Gate Drive Requirement

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

5.0

Applications

100 μA

T_J= 125°C

1 mA

^zPower Inverters

^zUPS

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

^zMotor Drives

^zSMPS

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

2.96

2.95

3.5

^zPFC Circuits

^zWelding Machines

T_J= 125°C

DS99730B(10/09)

12 3 4 5 6 7

中文翻译

下载PDF

与IXGP30N120B3相关器件

型号	品牌	获取价格	描述	数据表
IXGP30N60B2	IXYS	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
IXGP30N60B2	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
IXGP30N60B4D1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3
IXGP30N60C2	IXYS	获取价格	HiPerFAST IGBT C2- Class High Speed IGBTs
IXGP30N60C2	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP30N60C3	IXYS	获取价格	GenX3 600V IGBT
IXGP30N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP30N60C3C1	IXYS	获取价格	GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGP30N60C3C1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGP30N60C3D4	IXYS	获取价格	GenX3 600V IGBT With Diode