Datasheet > IXGP28N60A3M

IXGP28N60A3M

更新时间： 2024-01-09 10:31:19

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	175K
描述
Insulated Gate Bipolar Transistor,

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技术参数
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IXGP28N60A3M 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.68	Base Number Matches：	1

IXGP28N60A3M 数据手册

IXGP28N60A3M

Fig. 18. Inductive Turn-on

Switching Times vs. Gate Resistance

Fig. 19. Inductive Turn-on

Switching Times vs. Junction Temperature

130

110

130

110

t _{r i}

t_d(on)

= 125ºC, V = 15V

= 40A

= 480V

t _{r i}

t_d(on)

= 40A

= 10 , V = 15V



= 480V

= 20A

= 10A

110

130

150

105

115

125

T_J- Degrees Centigrade

R_G- Ohms

Fig. 20. Inductive Turn-on

Switching Times vs. Collector Current

t _{r i}

t_d(on)

= 10 , V = 15V



= 480V

= 125ºC, 25ºC

25ºC < T < 125ºC

I_C- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: IXG_28N60A3 (45) 6-21-16-B

1...3 4 567

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