Datasheet > IXGP2N100

IXGP2N100

更新时间： 2024-01-27 20:21:11

品牌	Logo	应用领域
IXYS		双极性晶体管高压
页数	文件大小	规格书
2页	87K
描述
High Voltage IGBT

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数据手册

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IXGP2N100 数据手册

V_CES

I_C90

V_CE(SAT)

High Voltage IGBT

IXGP 2N100 1000 V 2.0 A

IXGP 2N100A 1000 V 2.0 A

2.7 V

3.5 V

Symbol

V_CES

Test Conditions

Maximum Ratings

TO-220

T_J= 25°C to 150°C

1000

V_CGR

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C90

I_CM

T_C= 25°C

T_C= 90°C

T_C= 25°C, 1 ms

1 = Gate

3 = Emitter

2 = Collector

4 = Collector

SSOA

V_GE= 15 V, T_J= 125°C, R_G= 150W

I_CM= 6

(RBSOA)

Clamped inductive load

@ 0.8 V_CES

P_C

T_C= 25°C

T_J

-55 ... +150

150

°C

T_JM

T_STG

-55 ... +150

°C

Weight

Features

Max. Lead Temperature for

300

°C

Soldering (1.6mm from case for 10s)

International standard package

Low V_CE(sat)

- for low on-state conduction losses

High current handling capability

MOS Gate turn-on

Symbol

Test Conditions

Characteristic Values

- drive simplicity

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 25µA, V_GE= 0 V

I_C= 25µA, V_CE= V_GE

1000

Applications

2.5

5.0

V_CE= 0.8 V_CES

V_GE= 0 V

T_J

25°C

10 µA

Capacitor discharge

Anode triggering of thyristors

DC choppers

T_J= 125°C

200 µA

I_GES

V_CE= 0 V, V_GE= ±20 V

I_C= I_C90, V_GE= 15 V

+ 50 nA

V_CE(sat)

IXGP2N100

IXGP2N100A

2.7

3.5

Switched-mode and resonant-mode

power supplies.

95514C (9/00)

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