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AUIRF2804 PDF预览

AUIRF2804

更新时间： 2024-02-04 23:06:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 377K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRF2804 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT PACKAGE-3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.37Is Samacsys：N
雪崩能效等级（Eas）：540 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：195 A最大漏极电流 (ID)：270 A
最大漏源导通电阻：0.0023 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
最大脉冲漏极电流 (IDM)：1080 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRF2804 数据手册

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PD-96290  
AUIRF2804  
AUIRF2804S  
AUTOMOTIVE GRADE  
AUIRF2804L  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
V(BR)DSS  
40V  
1.5m  
D
RDS(on) typ.  
Ω
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
max.  
2.0mΩ  
270A  
195A  
G
ID (Silicon Limited)  
ID (Package Limited)  
S
Description  
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fast switching speed and improved repetitive ava-  
lanche rating . These features combine to make this  
design an extremely efficient and reliable device for  
use in Automotive applications and a wide variety of  
other applications.  
D
D
D
S
D
S
S
D
G
D
G
G
D2Pak  
TO-262  
TO-220AB  
AUIRF2804  
AUIRF2804S  
AUIRF2804L  
G
D
S
Gate  
Drain  
Source  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
270  
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
190  
195  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
A
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
1080  
300  
Pulsed Drain Current  
DM  
P
@TC = 25°C  
Maximum Power Dissipation  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
2.0  
± 20  
W/°C  
V
V
GS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
540  
1160  
mJ  
EAS (tested)  
Avalanche Current  
IAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
T
J
Operating Junction and  
-55 to + 175  
T
STG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
–––  
62  
Units  
Junction-to-Case  
RθJC  
RθCS  
RθJA  
RθJA  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
02/19/10  
1234567...15

中文翻译

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AUIRF2804 替代型号

型号 品牌 替代类型 描述 数据表
IRF2804 INFINEON

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 HEXFET Power MOSFET
IRF2804PBF INFINEON

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