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AUIRF3007 PDF预览

AUIRF3007

更新时间： 2024-09-13 21:11:59
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 239K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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AUIRF3007 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
配置：Single最大漏极电流 (Abs) (ID)：75 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：200 W子类别：FET General Purpose Power
表面贴装：NO处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRF3007 数据手册

 浏览型号AUIRF3007的Datasheet PDF文件第2页浏览型号AUIRF3007的Datasheet PDF文件第3页浏览型号AUIRF3007的Datasheet PDF文件第4页浏览型号AUIRF3007的Datasheet PDF文件第5页浏览型号AUIRF3007的Datasheet PDF文件第6页浏览型号AUIRF3007的Datasheet PDF文件第7页 
PD - 96417  
AUTOMOTIVEGRADE  
AUIRF3007  
HEXFET® Power MOSFET  
Features  
D
l Advanced Planar Technology  
l Low On-Resistance  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l RepetitiveAvalancheAllowed  
up to Tjmax  
V(BR)DSS  
75V  
RDS(on) typ.  
max  
ID (Silicon Limited)  
10.5m  
12.6m  
80A  
Ω
Ω
G
S
ID (Package Limited)  
75A  
l Lead-Free, RoHS Compliant  
l AutomotiveQualified*  
Description  
D
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
S
D
G
TO-220AB  
AUIRF3007  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
80  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
56  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
75  
@ T = 25°C  
C
320  
DM  
200  
1.3  
P
@T = 25°C Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
AS (tested)  
280  
946  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
E
IAR  
See Fig. 12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energy  
mJ  
-55 to + 175  
T
T
Operating Junction and  
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.74  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/1/11  
1234567...12

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AUIRF3007 替代型号

型号 品牌 替代类型 描述 数据表
IRF3007PBF INFINEON

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 HEXFET㈢ Power MOSFET

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