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AUIRF3004WL PDF预览

AUIRF3004WL

更新时间： 2024-09-13 12:29:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
10页 236K
描述
HEXFETPower MOSFET

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中文翻译

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AUIRF3004WL 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, TO-262 WIDELEAD, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：1.74Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：934076
Samacsys Pin Count：3Samacsys Part Category：MOSFET (N-Channel)
Samacsys Package Category：Transistor Outline, VerticalSamacsys Footprint Name：AUIRF3004WL
Samacsys Released Date：2019-01-08 05:49:45Is Samacsys：N
其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：470 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：240 A最大漏极电流 (ID)：240 A
最大漏源导通电阻：0.0014 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：375 W
最大脉冲漏极电流 (IDM)：1544 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRF3004WL 数据手册

 浏览型号AUIRF3004WL的Datasheet PDF文件第2页浏览型号AUIRF3004WL的Datasheet PDF文件第3页浏览型号AUIRF3004WL的Datasheet PDF文件第4页浏览型号AUIRF3004WL的Datasheet PDF文件第5页浏览型号AUIRF3004WL的Datasheet PDF文件第6页浏览型号AUIRF3004WL的Datasheet PDF文件第7页 
PD - 97677  
AUTOMOTIVE GRADE  
AUIRF3004WL  
HEXFET® Power MOSFET  
Features  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l 50% Lower Lead Resistance  
l 175°C Operating Temperature  
l Fast Switching  
l Repetitive Avalanche Allowed up to Tjmax  
l Lead-Free, RoHS Compliant  
l Automotive Qualified *  
D
S
V(BR)DSS  
40V  
1.27m  
1.40m  
386A  
RDS(on) typ.  
Ω
Ω
max.  
ID (Silicon Limited)  
ID (Package Limited)  
G
240A  
Description  
Specifically design for automotive applications this Widelead TO-  
262 package part has the advantage of having over 50% lower  
lead resistance and delivering over 20% lower Rds(on) when  
compared with a traditional TO-262 package housing the same  
silicondie.Thisgreatlyhelpsinreducingconditionlosses,achieving  
higher current levels or enabling a system to run cooler and have  
improved efficiency. Additional features of this design are a 175°C  
junctionoperatingtemperature,fastswitchingspeedandimproved  
repetitive avalanche rating . These features combine to make this  
design an extremely efficient and reliable device for use in  
S
D
G
TO-262 WideLead  
Automotive and other applications.  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
These are stress ratings only; and functional operation of the device at these or any other condition beyond those  
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended  
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
386  
273  
A
240  
1544  
PD @TC = 25°C  
W
375  
Maximum Power Dissipation  
2.5  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
470  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
6.1  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
Rθ  
–––  
Junction-to-Case  
0.40  
°C/W  
JC  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
05/13/11  
1234567...10

中文翻译

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