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AUIRF3205

更新时间： 2024-09-13 14:49:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 222K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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AUIRF3205 技术参数

是否Rohs认证：符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：1.26
Is Samacsys：N配置：Single
最大漏极电流 (Abs) (ID)：75 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：200 W
子类别：FET General Purpose Power表面贴装：NO
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AUIRF3205 数据手册

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PD - 97741  
AUTOMOTIVEGRADE  
AUIRF3205  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
AdvancedPlanarTechnology  
D
LowOn-Resistance  
V(BR)DSS  
55V  
DynamicdV/dTRating  
175°COperatingTemperature  
Fast Switching  
FullyAvalancheRated  
RepetitiveAvalancheAllowed  
up to Tjmax  
RDS(on) max.  
ID (Silicon Limited)  
ID (Package Limited)  
8.0m  
110A  
G
S
75A  
l
l
Lead-Free,RoHSCompliant  
AutomotiveQualified*  
D
Description  
Specifically designed for Automotive applications,  
this Stripe Planar design of HEXFET® Power  
MOSFETs utilizes the latest processing techniques  
to achieve low on-resistance per silicon area. This  
benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for  
use in Automotive and a wide variety of other appli-  
cations.  
S
D
G
TO-220AB  
AUIRF3205  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
110  
80  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
@ T = 25°C  
C
I
I
I
I
D
D
D
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
A
@ T = 100°C  
C
75  
@ T = 25°C  
C
390  
DM  
200  
1.3  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
Linear Derating Factor  
Gate-to-Source Voltage  
± 20  
V
GS  
EAS  
IAR  
264  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
62  
20  
EAR  
Repetitive Avalanche Energy  
Operating Junction and  
mJ  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RJC  
RCS  
RJA  
Junction-to-Case  
–––  
0.50  
–––  
0.75  
–––  
62  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/10/11  
1234567...11

中文翻译

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AUIRF3205 替代型号

型号 品牌 替代类型 描述 数据表
AUIRF3205Z INFINEON

类似代替

 HEXFET? Power MOSFET
IRF3205ZPBF INFINEON

类似代替

 AUTOMOTIVE MOSFET
IRF3205PBF INFINEON

类似代替

 HEXFET Power MOSFET

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AUIRF3315STRL INFINEON

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AUIRF3415 INFINEON

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AUIRF3504 INFINEON

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