IRF2804

更新时间： 2024-09-12 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	276K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IRF2804 数据手册

PD - 94436C

IRF2804

AUTOMOTIVE MOSFET

IRF2804S

IRF2804L

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS= 40V

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

R_DS(on)= 2.0mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 75A

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescom-

bine to make this design an extremely efficient

andreliabledeviceforuseinAutomotiveapplica-

tions and a wide variety of other applications.

D²Pak

IRF2804S

TO-262

IRF2804L

TO-220AB

IRF2804

Absolute Maximum Ratings

Parameter

Max.

280

200

Units

@ T_C= 25°C

@ T_C= 100°C

@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (See Fig. 9)

(Package Limited)

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

1080

330

@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

2.2

W/°C

± 20

E_AS

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

670

1160

_AS(tested)

Avalanche Current

I_AR

E_AR

See Fig.12a,12b,15,16

Repetitive Avalanche Energy

°C

Operating Junction and

-55 to + 175

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.45

–––

Units

R_θ

Junction-to-Case

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount, steady state)

HEXFET^®is a registered trademark of International Rectifier.

www.irf.com

08/27/03

12 3 4 5 6 7...12

中文翻译

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IRF2804 替代型号

型号	品牌	替代类型	描述	数据表
AUIRF2804	INFINEON	类似代替	HEXFET® Power MOSFET
IRF2804PBF	INFINEON	类似代替	AUTOMOTIVE MOSFET

与IRF2804相关器件

型号	品牌	获取价格	描述	数据表
IRF2804L	INFINEON	获取价格	HEXFET Power MOSFET
IRF2804LPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2804PBF	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2804PBF	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时
IRF2804PBF_10	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRF2804S	INFINEON	获取价格	HEXFET Power MOSFET
IRF2804S-7P	INFINEON	获取价格	AUTOMOTIVE MOSFET
IRF2804S-7PPBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF2804S-7PTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, M
IRF2804SPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET