5秒后页面跳转
IRF2807SPBF PDF预览

IRF2807SPBF

更新时间: 2024-12-01 12:33:43
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
10页 4246K
描述
Advanced Process Technology Ultra Low On-Resistance

IRF2807SPBF 数据手册

 浏览型号IRF2807SPBF的Datasheet PDF文件第2页浏览型号IRF2807SPBF的Datasheet PDF文件第3页浏览型号IRF2807SPBF的Datasheet PDF文件第4页浏览型号IRF2807SPBF的Datasheet PDF文件第5页浏览型号IRF2807SPBF的Datasheet PDF文件第6页浏览型号IRF2807SPBF的Datasheet PDF文件第7页 
IRF2807SPbF  
www.kersemi.com  
IRF2807LPbF  
l Advanced Process Technology  
l Ultra Low On-Resistance  
l Dynamic dv/dt Rating  
l 175°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Lead-Free  
Description  
HEXFET® Power MOSFET  
D
VDSS = 75V  
RDS(on) = 13mΩ  
G
ID = 82A‡  
S
AdvancedHEXFET® PowerMOSFETsfromInternational  
Rectifierutilizeadvancedprocessingtechniquestoachieve  
extremelylowon-resistancepersiliconarea. Thisbenefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
The D2Pak is a surface mount power package capable of  
accommodatingdiesizesuptoHEX-4. Itprovidesthehighest  
powercapabilityandthelowestpossibleon-resistanceinany  
existing surface mount package. The D2Pak is suitable for  
highcurrentapplicationsbecauseofitslowinternalconnection  
resistance and can dissipate up to 2.0W in a typical surface  
mount application.  
D2Pak  
TO-262  
IRF2807SPbF  
IRF2807LPbF  
The through-hole version (IRF2807L) is available for low-  
profile applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
82‡  
58  
A
280  
PD @TC = 25°C  
Power Dissipation  
230  
W
W/°C  
V
Linear Derating Factor  
1.5  
VGS  
IAR  
Gate-to-Source Voltage  
± 20  
Avalanche Current  
43  
23  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.9  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 srew  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.75  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount)**  
–––  
40  
1

与IRF2807SPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF2807STRL INFINEON

获取价格

Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRF2807STRLPBF INFINEON

获取价格

Advanced Process Technology
IRF2807STRR INFINEON

获取价格

Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Met
IRF2807STRRPBF INFINEON

获取价格

暂无描述
IRF2807Z KERSEMI

获取价格

AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807Z INFINEON

获取价格

Advanced Process Technology
IRF2807ZHR INFINEON

获取价格

暂无描述
IRF2807ZL INFINEON

获取价格

Advanced Process Technology
IRF2807ZL KERSEMI

获取价格

AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807ZLPBF INFINEON

获取价格

AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)