生命周期: | Active | 包装说明: | PLASTIC, D2PAK-3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.66 | 其他特性: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 200 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 75 V |
最大漏极电流 (ID): | 75 A | 最大漏源导通电阻: | 0.0094 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 350 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF280ZSTRR | INFINEON |
获取价格 |
75A, 75V, 0.0094ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, D2PAK-3 | |
IRF28D | ETC |
获取价格 |
Analog IC | |
IRF28S | ETC |
获取价格 |
Analog IC | |
IRF2903Z | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF2903ZL | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF2903ZLPBF | INFINEON |
获取价格 |
AUTOMOTIVE MOSFET | |
IRF2903ZLTRLPBF | INFINEON |
获取价格 |
暂无描述 | |
IRF2903ZLTRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IRF2903ZPBF | INFINEON |
获取价格 |
AUTOMOTIVE MOSFET | |
IRF2903ZS | INFINEON |
获取价格 |
HEXFET Power MOSFET |