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IRF280ZSTRL PDF预览

IRF280ZSTRL

更新时间: 2024-11-01 21:16:07
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 399K
描述
Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

IRF280ZSTRL 技术参数

生命周期:Active包装说明:PLASTIC, D2PAK-3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66其他特性:AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级(Eas):200 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (ID):75 A最大漏源导通电阻:0.0094 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):350 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF280ZSTRL 数据手册

 浏览型号IRF280ZSTRL的Datasheet PDF文件第2页浏览型号IRF280ZSTRL的Datasheet PDF文件第3页浏览型号IRF280ZSTRL的Datasheet PDF文件第4页浏览型号IRF280ZSTRL的Datasheet PDF文件第5页浏览型号IRF280ZSTRL的Datasheet PDF文件第6页浏览型号IRF280ZSTRL的Datasheet PDF文件第7页 
PD - 95488A  
IRF2807ZPbF  
IRF2807ZSPbF  
Features  
IRF2807ZLPbF  
Advanced Process Technology  
HEXFET® Power MOSFET  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 75V  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 9.4mΩ  
G
ID = 75A  
Description  
S
ThisHEXFET® PowerMOSFETutilizesthelatest  
processing techniques to achieve extremely low  
on-resistancepersiliconarea. Additionalfeatures  
of this design are a 175°C junction operating  
temperature, fast switching speed and improved  
repetitive avalanche rating. These features  
combinetomakethisdesignanextremelyefficient  
and reliable device for use in a wide variety of  
applications.  
D2Pak  
TO-262  
TO-220AB  
IRF2807ZPbF  
IRF2807ZSPbF IRF2807ZLPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
89  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
D
D
D
63  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
75  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
350  
170  
DM  
P
@TC = 25°C  
Maximum Power Dissipation  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
1.1  
± 20  
W/°C  
V
V
GS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
160  
200  
mJ  
E
AS (tested)  
Avalanche Current  
IAR  
EAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
mJ  
°C  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.90  
–––  
62  
Units  
°C/W  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat, Greased Surface  
0.50  
–––  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
07/22/10  

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