IRF2903ZL

更新时间： 2024-09-25 22:48:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	415K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRF2903ZL 数据手册

PD - 96988A

IRF2903Z

IRF2903ZS

AUTOMOTIVE MOSFET

IRF2903ZL

HEXFET^®Power MOSFET

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

V_DSS= 30V

R_DS(on)= 2.4mΩ

Repetitive Avalanche Allowed up to Tjmax

I_D= 75A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processingtechniquestoachieveextremelylowon-

resistance per silicon area. Additional features of

thisdesign area175°Cjunctionoperatingtempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

thisdesignanextremelyefficientandreliabledevice

foruseinAutomotiveapplicationsandawidevariety

of other applications.

D²Pak

TO-262

TO-220AB

IRF2903Z

IRF2903ZS

IRF2903ZL

Gate

Drain

Source

Absolute Maximum Ratings

Parameter

Max.

260

180

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

@ T = 100°C

@ T = 25°C

1020

290

2.0

@T = 25°C Power Dissipation

W/°C

Linear Derating Factor

± 20

290

820

Gate-to-Source Voltage

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

°C

STG

300 (1.6mm from case )

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.51

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

Junction-to-Ambient (PCB Mount, steady state)

–––

www.irf.com

8/26/05

12 3 4 5 6 7...12

中文翻译

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