IRF2807ZHR

更新时间： 2024-09-13 12:59:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	208K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRF2807ZHR 数据手册

PD - 91517

IRF2807

HEXFET^®Power MOSFET

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

V_DSS= 75V

l 175°C Operating Temperature

l Fast Switching

R_DS(on)= 13mΩ

l Fully Avalanche Rated

I_D= 82A

Description

AdvancedHEXFET^®PowerMOSFETsfromInternational

Rectifierutilizeadvancedprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Thisbenefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well

knownfor,providesthedesignerwithanextremelyefficient

andreliabledeviceforuseinawidevarietyofapplications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

280

P_D@T_C= 25°C

Power Dissipation

230

W/°C

Linear Derating Factor

1.5

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

5.9

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

0.65

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

www.irf.com

3/16/01

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRF2807ZHR相关器件

型号	品牌	获取价格	描述	数据表
IRF2807ZL	INFINEON	获取价格	Advanced Process Technology
IRF2807ZL	KERSEMI	获取价格	AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807ZLPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)
IRF2807ZPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)
IRF2807ZS	KERSEMI	获取价格	AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807ZS	INFINEON	获取价格	Advanced Process Technology
IRF2807ZSPBF	INFINEON	获取价格	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)
IRF2807ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me