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IRF2807ZPBF PDF预览

IRF2807ZPBF

更新时间： 2024-02-07 01:54:08
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
12页 280K
描述
AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

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中文翻译

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IRF2807ZPBF 数据手册

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PD - 95488  
IRF2807ZPbF  
AUTOMOTIVE MOSFET IRF2807ZSPbF  
Features  
IRF2807ZLPbF  
O
O
O
O
O
O
O
Advanced Process Technology  
HEXFET® Power MOSFET  
Ultra Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
D
VDSS = 75V  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free  
RDS(on) = 9.4mΩ  
G
Description  
ID = 75A  
SpecificallydesignedforAutomotiveapplications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low  
on-resistance per silicon area. Additional fea-  
turesofthisdesign area175°Cjunctionoperating  
temperature, fast switching speed and improved  
repetitive avalanche rating . These features com-  
bine to make this design an extremely efficient  
and reliable device for use in Automotive applica-  
tions and a wide variety of other applications.  
S
D2Pak  
TO-262  
IRF2807ZL  
TO-220AB  
IRF2807Z  
IRF2807ZS  
Absolute Maximum Ratings  
Parameter  
Max.  
89  
Units  
A
I
I
I
I
@ TC = 25°C  
@ TC = 100°C  
@ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (See Fig. 9)  
D
D
D
63  
75  
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
350  
170  
DM  
P
@TC = 25°C  
Maximum Power Dissipation  
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
1.1  
W/°C  
V
V
± 20  
GS  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
160  
200  
mJ  
EAS (tested)  
Avalanche Current  
IAR  
See Fig.12a,12b,15,16  
A
Repetitive Avalanche Energy  
EAR  
mJ  
°C  
T
J
Operating Junction and  
-55 to + 175  
T
Storage Temperature Range  
STG  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.90  
–––  
62  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
°C/W  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat, Greased Surface  
0.50  
–––  
Junction-to-Ambient  
–––  
40  
Junction-to-Ambient (PCB Mount, steady state)  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
06/30/04  
1234567...12

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IRF2807ZPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF2807Z INFINEON

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与IRF2807ZPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF2807ZS KERSEMI

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 		AUTOMOTIVE MOSFET Advanced Process Technology
IRF2807ZS INFINEON

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 		Advanced Process Technology
IRF2807ZSPBF INFINEON

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 		AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)
IRF2807ZSTRL INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRLPBF INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRR INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF2807ZSTRRPBF INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF280ZLPBF INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF280ZPBF INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me
IRF280ZSPBF INFINEON

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 		Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Me

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