IRFB3607PBF

更新时间： 2024-11-18 04:18:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
11页	426K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFB3607PBF 数据手册

PD - 97308A

IRFB3607PbF

IRFS3607PbF

Applications

l High Efficiency Synchronous Rectification in

IRFSL3607PbF

HEXFET^®Power MOSFET

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max.

75V

7.34m

9.0m

Benefits

I_D

80A

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

D²Pak

TO-262

TO-220AB

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

Max.

80c

56c

310

140

0.96

Units

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

120

Avalanche Currentꢀc

I_AR

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R_θJC

–––

0.50

–––

Junction-to-Case k

1.045

–––

R_θCS

R_θJA

°C/W

Case-to-Sink, Flat Greased Surface, TO-220

Junction-to-Ambient, TO-220 j

Junction-to-Ambient (PCB Mount) , D²Pak jk

www.irf.com

02/22/08

12 3 4 5 6 7...11

中文翻译

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IRFB3607PBF 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFU3607	INFINEON	完全替代	Advanced Process Technology
IRFSL3607PBF	INFINEON	完全替代	HEXFET Power MOSFET
IRF2807ZPBF	INFINEON	类似代替	AUTOMOTIVE MOSFET (75V, 94mOHM, 75A)

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