Datasheet > IRFB4127

IRFB4127

更新时间： 2024-11-22 11:14:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	299K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFB4127 数据手册

PD -97136A

IRFB4127PbF

HEXFET^®Power MOSFET

Applications

V_DSS

200V

l High Efficiency Synchronous Rectification in SMPS

R_DS(on)typ.

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

17m

20m

max.

I_D

76A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-220AB

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current c

Max.

Units

300

375

2.5

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery e

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

250

Avalanche Current c

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy f

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.4

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case j

Case-to-Sink, Flat Greased Surface

0.50

–––

°C/W

Junction-to-Ambient ij

www.irf.com

8/28/08

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFB4127相关器件

型号	品牌	获取价格	描述	数据表
IRFB4127PBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB4137PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB41N15D	INFINEON	获取价格	Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
IRFB41N15DPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB41N15DTRL	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFB41N15DTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFB41N15DTRR	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFB41N15DTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFB4212PBF	INFINEON	获取价格	DIGITAL AUDIO MOSFET
IRFB4215	INFINEON	获取价格	HEXFET Power MOSFET