Datasheet > IRFB4110_18

IRFB4110_18

更新时间： 2024-11-06 01:22:27

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	338K
描述
N-Channel MOSFET Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFB4110_18 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

IRFB4110，IIRFB4110

·FEATURES

·Static drain-source on-resistance:

RDS(on) ≤4.5mΩ

·Enhancement mode

·Fast Switching Speed

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·reliable device for use in a wide variety of applications

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

100

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

180

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

670

P_D

370

℃

175

T_j

-55~175

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(ch-c)

Rth(ch-a)

PARAMETER

MAX

UNIT

Channel-to-case thermal resistance

℃/W

0.402

Channel-to-ambient thermal resistance

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

中文翻译

下载PDF

与IRFB4110_18相关器件

型号	品牌	获取价格	描述	数据表
IRFB4110GPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB4110PBF	FREESCALE	获取价格	HEXFETPower MOSFET
IRFB4110PBF	INFINEON	获取价格	High Efficiency Synchronous Rectification in SMPS
IRFB4110QPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB4115	ISC	获取价格	N-Channel MOSFET Transistor
IRFB4115	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
IRFB4115G	ISC	获取价格	N-Channel MOSFET Transistor
IRFB4115GPBF	INFINEON	获取价格	HEXFETPower MOSFET
IRFB4115PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFB4127	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim