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IRFB4110_18 PDF预览

IRFB4110_18

更新时间: 2024-11-22 01:22:27
品牌 Logo 应用领域
无锡固电 - ISC /
页数 文件大小 规格书
2页 338K
描述
N-Channel MOSFET Transistor

IRFB4110_18 数据手册

 浏览型号IRFB4110_18的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IRFB4110IIRFB4110  
·FEATURES  
·Static drain-source on-resistance:  
RDS(on) ≤4.5m  
·Enhancement mode  
·Fast Switching Speed  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
·DESCRITION  
·reliable device for use in a wide variety of applications  
·ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGS  
ID  
PARAMETER  
VALUE  
100  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
180  
V
Drain Current-Continuous  
Drain Current-Single Pulsed  
Total Dissipation @TC=25℃  
Max. Operating Junction Temperature  
Storage Temperature  
A
IDM  
670  
A
PD  
370  
W
175  
Tj  
-55~175  
Tstg  
·THERMAL CHARACTERISTICS  
SYMBOL  
Rth(ch-c)  
Rth(ch-a)  
PARAMETER  
MAX  
UNIT  
Channel-to-case thermal resistance  
/W  
/W  
0.402  
62  
Channel-to-ambient thermal resistance  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  

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