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IRFB3806 PDF预览

IRFB3806

更新时间: 2024-11-19 11:15:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 573K
描述
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

IRFB3806 数据手册

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PD - 97310  
IRFB3806PbF  
IRFS3806PbF  
Applications  
IRFSL3806PbF  
HEXFET® Power MOSFET  
60V  
l High Efficiency Synchronous Rectification in  
SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
12.6m  
15.8m  
43A  
G
Benefits  
ID  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
D
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
S
S
S
D
D
G
G
G
D2Pak  
TO-262  
TO-220AB  
IRFB3806PbF  
IRFS3806PbF  
IRFSL3806PbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current c  
Max.  
43  
Units  
A
ID @ TC = 100°C  
IDM  
31  
170  
71  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
0.47  
20  
W/°C  
V
VGS  
Gate-to-Source Voltage  
24  
Peak Diode Recovery e  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lbxin (1.1Nxm)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy d  
EAS (Thermally limited)  
73  
25  
mJ  
A
Avalanche Current c  
IAR  
Repetitive Avalanche Energy f  
EAR  
7.1  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
Max.  
Units  
RθJC  
–––  
0.50  
–––  
–––  
Junction-to-Case j  
2.12  
–––  
62  
RθCS  
RθJA  
RθJA  
°C/W  
Case-to-Sink, Flat Greased Surface, TO-220  
Junction-to-Ambient, TO-220 ij  
Junction-to-Ambient (PCB Mount) , D2Pak ij  
40  
www.irf.com  
1
02/29/08  

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种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C