IRFB4110PBF

更新时间： 2024-11-05 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		开关
页数	文件大小	规格书
8页	709K
描述
High Efficiency Synchronous Rectification in SMPS

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中文翻译

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数据手册
替代型号

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IRFB4110PBF 数据手册

PD - 97061A

IRFB4110PbF

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

max

I_D

100V

3.7m

4.5m

180A

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

TO-220AB

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current d

Max.

180c

130c

670

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

370

Maximum Power Dissipation

Linear Derating Factor

2.5

W/°C

V_GS

± 20

5.3

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

210

Avalanche Currentꢀc

I_AR

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

Units

R_θJC

0.402

–––

Junction-to-Case k

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient j

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11/3/05

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中文翻译

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IRFB4110PBF 替代型号

型号	品牌	替代类型	描述	数据表
IPP041N12N3GXKSA1	INFINEON	类似代替	Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon,
IRFB4110GPBF	INFINEON	类似代替	HEXFET Power MOSFET
FDP047N10	FAIRCHILD	功能相似	N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM

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