IRFB4110QPBF

更新时间： 2024-10-30 02:52:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	306K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFB4110QPBF 数据手册

PD - 96138

IRFB4110QPbF

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

l Lead-Free

V_DSS

100V

R_DS(on)typ.

max

I_D

3.7m

4.5m

180A

Benefits

l Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l 175°C Operating Temperature

l Automotive [Q101] Qualified

TO-220AB

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

180

130

670

370

2.5

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

± 20

5.3

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

210

Avalanche Current

I_AR

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

Units

R_θJC

0.402

–––

Junction-to-Case

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

www.irf.com

02/11/08

12 3 4 5 6 7 8

中文翻译

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