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IRFB4310HR PDF预览

IRFB4310HR

更新时间: 2024-11-01 20:58:03
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 350K
描述
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

IRFB4310HR 数据手册

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PD - 96894A  
IRFB4310  
IRFS4310  
IRFSL4310  
Applications  
HEXFET® Power MOSFET  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
100V  
5.6m  
RDS(on) typ.  
l Hard Switched and High Frequency Circuits  
G
7.0m  
140A  
max.  
Benefits  
l Worldwide Best RDS(on) in TO-220  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
ID  
S
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
G D S  
G D S  
G D S  
D2Pak  
IRFS4310  
TO-262  
IRFSL4310  
TO-220AB  
IRFB4310  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
140  
97  
Units  
A
Continuous Drain Current, VGS @ 10V  
ID @ TC = 100°C  
IDM  
550  
330  
Pulsed Drain Current  
PD @TC = 25°C  
Maximum Power Dissipation  
Linear Derating Factor  
W
2.2  
W/°C  
V
± 20  
VGS  
Gate-to-Source Voltage  
14  
Peak Diode Recovery  
dV/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
980  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.45  
–––  
62  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Case  
JC  
CS  
JA  
JA  
Case-to-Sink, Flat Greased Surface , TO-220  
0.50  
–––  
°C/W  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
www.irf.com  
1
01/20/06  

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