Datasheet > IRFB4310HR

IRFB4310HR

更新时间： 2024-11-21 20:58:03

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
12页	350K
描述
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3

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IRFB4310HR 数据手册

PD - 96894A

IRFB4310

IRFS4310

IRFSL4310

Applications

HEXFET^®Power MOSFET

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

V_DSS

100V

5.6m

R_DS(on)typ.

l Hard Switched and High Frequency Circuits

7.0m

140A

max.

Benefits

l Worldwide Best R_DS(on)in TO-220

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

I_D

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS4310

TO-262

IRFSL4310

TO-220AB

IRFB4310

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

140

Units

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C

I_DM

550

330

Pulsed Drain Current

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

2.2

W/°C

± 20

V_GS

Gate-to-Source Voltage

Peak Diode Recovery

dV/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

980

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.45

–––

Units

R_θ

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

°C/W

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D²Pak

–––

www.irf.com

01/20/06

12 3 4 5 6 7...12

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