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IRFB4410PBF PDF预览

IRFB4410PBF

更新时间: 2024-11-24 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲PC局域网
页数 文件大小 规格书
11页 797K
描述
HEXFET Power MOSFET

IRFB4410PBF 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:LEAD FREE, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.75Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:658364
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO220AB_3
Samacsys Released Date:2018-02-02 13:56:58Is Samacsys:N
雪崩能效等级(Eas):220 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):88 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.01 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):250
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):200 W
最大脉冲漏极电流 (IDM):380 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFB4410PBF 数据手册

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PD - 95707E  
IRFB4410PbF  
IRFS4410PbF  
IRFSL4410PbF  
HEXFET® Power MOSFET  
Applications  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
100V  
8.0m  
10m  
88A  
G
ID  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
S
S
D
D
D
G
G
G
D2Pak  
IRFS4410PbF  
TO-262  
IRFSL4410PbF  
TO-220AB  
IRFB4410PbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V  
88  
A
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
63  
380  
Pulsed Drain Current  
PD @TC = 25°C  
200  
W
Maximum Power Dissipation  
Linear Derating Factor  
1.3  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
19  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
220  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 16a, 16b  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.61  
–––  
62  
Units  
Rθ  
Junction-to-Case  
JC  
CS  
JA  
JA  
Rθ  
Rθ  
Rθ  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
www.irf.com  
1
05/02/07  

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