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IRFB5615

更新时间： 2024-11-28 11:15:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 280K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

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IRFB5615 数据手册

 浏览型号IRFB5615的Datasheet PDF文件第2页浏览型号IRFB5615的Datasheet PDF文件第3页浏览型号IRFB5615的Datasheet PDF文件第4页浏览型号IRFB5615的Datasheet PDF文件第5页浏览型号IRFB5615的Datasheet PDF文件第6页浏览型号IRFB5615的Datasheet PDF文件第7页 
PD - 96173  
DIGITAL AUDIO MOSFET  
IRFB5615PbF  
Features  
Key Parameters  
• Key Parameters Optimized for Class-D Audio  
Amplifier Applications  
VDS  
150  
V
m
RDS(ON) typ. @ 10V  
Qg typ.  
32  
26  
• Low RDSON for Improved Efficiency  
• Low QG and QSW for Better THD and Improved  
Efficiency  
nC  
nC  
Ω
Q
sw typ.  
11  
2.7  
175  
RG(int) typ.  
TJ max  
°C  
• Low QRR for Better THD and Lower EMI  
• 175°C Operating Junction Temperature for  
Ruggedness  
D
S
D
• Can Deliver up to 300W per Channel into 4Ω Load in  
Half-Bridge Configuration Amplifier  
G
S
D
G
TO-220AB  
G
D
S
Gate  
Drain  
Source  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes  
thelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Furthermore,Gatecharge,body-diode  
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance  
factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction  
temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient,  
robust and reliable device for ClassD audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
150  
±20  
35  
Units  
VDS  
V
VGS  
Gate-to-Source Voltage  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
25  
A
140  
144  
72  
Power Dissipation  
PD @TC = 25°C  
PD @TC = 100°C  
W
Power Dissipation  
Linear Derating Factor  
0.96  
W/°C  
TJ  
Operating Junction and  
Storage Temperature Range  
-55 to + 175  
TSTG  
°C  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
Max.  
1.045  
–––  
Units  
Junction-to-Case  
RθJC  
–––  
0.50  
–––  
Rθ  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
CS  
RθJA  
62  
Notes  through ꢀare on page 2  
www.irf.com  
1
09/05/08  
12345678

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