IRFB4610

更新时间： 2024-11-23 22:51:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	382K
描述
IRFB4610 IRFS4610 IRFSL4610

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中文翻译

获取价格

数据手册
替代型号

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IRFB4610 数据手册

PD - 96906B

IRFB4610

IRFS4610

IRFSL4610

HEXFET^®Power MOSFET

Applications

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

R_DS(on)typ.

100V

11m:

14m:

73A

max.

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

I_D

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

G D S

D²Pak

IRFS4610

TO-262

IRFSL4610

TO-220AB

IRFB4610

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

Units

Continuous Drain Current, V_GS@ 10V

290

Pulsed Drain Current f

P_D@T_C= 25°C

190

Maximum Power Dissipation

Linear Derating Factor

1.3

W/°C

V_GS

± 20

Gate-to-Source Voltage

7.6

Peak Diode Recovery e

Operating Junction and

dV/dt

T_J

V/ns

°C

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy d

E_{AS (Thermally limited)}

370

Avalanche Currentꢀc

I_AR

See Fig. 14, 15, 16a, 16b,

Repetitive Avalanche Energy f

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.77

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case j

Case-to-Sink, Flat Greased Surface , TO-220

0.50

–––

°C/W

Junction-to-Ambient, TO-220 j

Junction-to-Ambient (PCB Mount) , D²Pak ij

–––

www.irf.com

11/3/04

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中文翻译

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IRFB4610 替代型号

型号	品牌	替代类型	描述	数据表
AUIRFB4610	INFINEON	类似代替	AUTOMOTIVE GRADE
IRFB4610PBF	INFINEON	类似代替	HEXFET Power MOSFET

与IRFB4610相关器件

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IRFB4610TRR	INFINEON	获取价格	Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Me
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IRFB4710PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET