品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
10页 | 493K | |
描述 | ||
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 7.92 |
雪崩能效等级(Eas): | 490 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (Abs) (ID): | 195 A | 最大漏极电流 (ID): | 195 A |
最大漏源导通电阻: | 0.0016 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 294 W | 最大脉冲漏极电流 (IDM): | 1270 A |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFB7434PBF | INFINEON |
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Brushed Motor drive applications | |
IRFB7437 | INFINEON |
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The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil | |
IRFB7437PBF | INFINEON |
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HEXFETPower MOSFET | |
IRFB7437PBF | UMW |
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种类:N-Channel;漏源电压(Vdss):40V;持续漏极电流(Id)(在25°C时 | |
IRFB7440 | ISC |
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N-Channel MOSFET Transistor | |
IRFB7440 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim | |
IRFB7440GPBF | INFINEON |
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Power Field-Effect Transistor | |
IRFB7440PBF | INFINEON |
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Brushed Motor drive applications | |
IRFB7440PBF | UMW |
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种类:N-Channel;漏源电压(Vdss):40V;持续漏极电流(Id)(在25°C时 | |
IRFB7446 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim |