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IRFB7437 PDF预览

IRFB7437

更新时间: 2023-12-06 20:09:12
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 253K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

IRFB7437 数据手册

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StrongIRFET™  
IRFB7437PbF  
HEXFET® Power MOSFET  
Applications  
l Brushed Motor drive applications  
l BLDC Motor drive applications  
l Battery powered circuits  
l Half-bridge and full-bridge topologies  
l Synchronousrectifierapplications  
l Resonant mode power supplies  
l OR-ing and redundant power switches  
l DC/DC and AC/DC converters  
l DC/AC Inverters  
VDSS  
RDS(on) typ.  
40V  
D
1.5m  
2.0m  
Ω
Ω
max.  
G
ID  
ID  
250A  
(Silicon Limited)  
S
195A  
(Package Limited)  
D
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
l Fully Characterized Capacitance and Avalanche SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
S
D
G
TO-220AB  
IRFB7437PbF  
l RoHS Compliant, Halogen-Free*  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
IRFB7437PbF  
TO-220  
Tube  
50  
IRFB7437PbF  
6
5
4
3
2
1
0
250  
200  
150  
100  
50  
LIMITED BY PACKAGE  
I
= 100A  
D
T
= 125°C  
= 25°C  
J
T
J
0
4.0  
6.0  
8.0 10.0 12.0 14.0 16.0 18.0 20.0  
, Gate-to-Source Voltage (V)  
25  
50  
75  
100  
125  
150  
175  
V
T
, Case Temperature (°C)  
GS  
C
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
www.irf.com © 2015 International Rectifier  
1
Submit Datasheet Feedback  
January 6, 2015  

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