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AUIRFB4410

更新时间： 2024-02-04 13:47:41
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
11页 284K
描述
Advanced Process Technology

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中文翻译

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AUIRFB4410 技术参数

是否Rohs认证： 符合生命周期：Transferred
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.2
Is Samacsys：N其他特性：AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：220 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.01 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：200 W最大脉冲漏极电流 (IDM)：380 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRFB4410 数据手册

 浏览型号AUIRFB4410的Datasheet PDF文件第2页浏览型号AUIRFB4410的Datasheet PDF文件第3页浏览型号AUIRFB4410的Datasheet PDF文件第4页浏览型号AUIRFB4410的Datasheet PDF文件第5页浏览型号AUIRFB4410的Datasheet PDF文件第6页浏览型号AUIRFB4410的Datasheet PDF文件第7页 
PD - 97598  
AUTOMOTIVE GRADE  
AUIRFB4410  
HEXFET® Power MOSFET  
Features  
●
●
●
●
●
●
Advanced Process Technology  
D
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
100V  
Ultra Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to  
Tjmax  
8.0m  
Ω
10m  
Ω
G
88A  
75A  
●
●
Lead-Free, RoHS Compliant  
Automotive Qualified *  
S
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
thisdesign area175°Cjunctionoperatingtemperature,fastswitching  
speed and improved repetitive avalanche rating . These features  
combine to make this design an extremely efficient and reliable  
device for use in Automotive applications and a wide variety of other  
S
D
G
TO-220AB  
AUIRFB4410  
applications.  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
88  
Units  
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
63  
75  
Continuous Drain Current, V  
Pulsed Drain Current  
(Package Limited)  
GS @ 10V  
380  
PD @TC = 25°C  
W
200  
Maximum Power Dissipation  
Linear Derating Factor  
1.3  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
Peak Diode Recovery  
19  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
Storage Temperature Range  
TSTG  
300  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
220  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 16a, 16b  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.61  
–––  
62  
Units  
Rθ  
Junction-to-Case  
JC  
Rθ  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
CS  
RθJA  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
11/23/2010  
1234567...11

中文翻译

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AUIRFB4410 替代型号

型号 品牌 替代类型 描述 数据表
IRFB4410PBF INFINEON

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IRFB4410 INFINEON

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